FCU360N65S3R0 vs FCU3400N80Z vs FCU30A30

 
PartNumberFCU360N65S3R0FCU3400N80ZFCU30A30
DescriptionMOSFET SUPERFET3 650V 10A 360 mOhmMOSFET SF2 800V 3.4OHM E IPAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseIPAK-3TO-251-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V800 V-
Id Continuous Drain Current10 A2 A-
Rds On Drain Source Resistance360 mOhms3.4 Ohms-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage30 V20 V, 30 V-
Qg Gate Charge18 nC7.4 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation83 W32 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesSuperFET3FCU3400N80Z-
BrandON SemiconductorON Semiconductor / Fairchild-
Forward Transconductance Min6 S2 S-
Fall Time10 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns6.4 ns-
Factory Pack Quantity18001800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time34 ns22.7 ns-
Typical Turn On Delay Time12 ns10 ns-
Tradename-SuperFET II-
Height-6.3 mm-
Length-6.8 mm-
Width-2.5 mm-
Unit Weight-0.012102 oz-
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