DRDN005W-7 vs DRDN005W vs DRDN010W

 
PartNumberDRDN005W-7DRDN005WDRDN010W
DescriptionBipolar Transistors - BJT NPN Trans/Switch Diode-Relay Drvr
ManufacturerDiodes IncorporatedDiodes-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage250 mV250 mV-
Maximum DC Collector Current500 mA500 mA-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDRDN005DRDN005-
Height1 mm--
Length2.2 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.35 mm--
BrandDiodes Incorporated--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz0.000212 oz-
Package Case-6-TSSOP, SC-88, SOT-363-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-363-
Power Max-200mW-
Transistor Type-NPN + Diode (Isolated)-
Current Collector Ic Max-500mA-
Voltage Collector Emitter Breakdown Max-80V-
DC Current Gain hFE Min Ic Vce-100 @ 100mA, 1V-
Vce Saturation Max Ib Ic-250mV @ 10mA, 100mA-
Current Collector Cutoff Max-100nA-
Frequency Transition-100MHz-
Pd Power Dissipation-200 mW-
Collector Emitter Voltage VCEO Max-80 V-
Collector Base Voltage VCBO-80 V-
Emitter Base Voltage VEBO-4 V-
DC Collector Base Gain hfe Min-100 at 10 mA 1 V-
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