 |  | | |
| PartNumber | DMN80H2D0SCTI | DMN8100-C0 | DMN8102 |
| Description | MOSFET MOSFETBVDSS: 651V-800V | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | ITO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 7 A | - | - |
| Rds On Drain Source Resistance | 1.4 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 35.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 41 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 42.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 35.8 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 104 ns | - | - |
| Typical Turn On Delay Time | 20.5 ns | - | - |
| Unit Weight | 0.065257 oz | - | - |