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| PartNumber | DMN3016LDN-7 | DMN3016LDN-13 | DMN3016LDN |
| Description | MOSFET N-Ch 30V Dual Enh 20Vgss 1.1W 1115pF | MOSFET MOSFET BVDSS: 25V~30V V-DFN3030-8 T&R 10K | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | V-DFN3030-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 7.3 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms, 24 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 25.1 nC, 25.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.6 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 0.8 mm | - | - |
| Length | 3 mm | - | - |
| Product | Enhancement Mode MOSFET | - | - |
| Series | DMN3016 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Type | Enhancement Mode MOSFET | - | - |
| Width | 3 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | - | - | - |
| Fall Time | 5.6 ns, 5.6 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 16.5 ns, 16.5 ns | - | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 26.1 ns, 26.1 ns | - | - |
| Typical Turn On Delay Time | 4.8 ns, 4.8 ns | - | - |