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| PartNumber | CSD18531Q5A | CSD18531Q5AT | CSD18532 |
| Description | MOSFET 60V N-Channel NexFET Power MOSFET | MOSFET 60V N-channel NexFET Power MOSFET | |
| Manufacturer | Texas Instruments | Texas Instruments | TI |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | E | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | VSONP-8 | VSONP-8 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 100 A | 134 A | - |
| Rds On Drain Source Resistance | 4.6 mOhms | 4.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 36 nC | 43 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 156 W | 156 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Tube |
| Height | 1 mm | 1 mm | - |
| Length | 6 mm | 6 mm | - |
| Series | CSD18531Q5A | CSD18531Q5A | CSD18532KCS |
| Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | 1 N-Channel |
| Width | 4.9 mm | 4.9 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Development Kit | DRV8711EVM | DRV8711EVM | - |
| Fall Time | 2.7 ns | 2.7 ns | 5.6 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7.8 ns | 7.8 ns | 5.3 ns |
| Factory Pack Quantity | 2500 | 250 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | 24.2 ns |
| Typical Turn On Delay Time | 4.4 ns | 4.4 ns | 7.8 ns |
| Forward Transconductance Min | - | 128 S | - |
| Unit Weight | - | 0.000847 oz | 0.211644 oz |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 216 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 169 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.8 V |
| Rds On Drain Source Resistance | - | - | 5.3 mOhms |
| Qg Gate Charge | - | - | 44 nC |
| Forward Transconductance Min | - | - | 146 S |