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| PartNumber | CSD18511KTTT | CSD18511KTT | CSD18511KCS |
| Description | MOSFET 40V, N ch NexFET MOSFETG , single D2PAK, 2.6mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 40V, N ch NexFET MOSFETG , single D2PAK, 2.6mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 40V, N ch NexFET MOSFETG , single TO-220, 2.6mOhm 3-TO-220 -55 to 175 |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | TO-263-3 | TO-263-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 194 A | 194 A | 194 A |
| Rds On Drain Source Resistance | 3.2 mOhms | 3.2 mOhms | 3.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 64 nC | 64 nC | 64 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 188 W | 188 W | 188 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Tube |
| Series | CSD18511KTT | CSD18511KTT | CSD18511KCS |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Forward Transconductance Min | 249 S | 249 S | 249 S |
| Fall Time | 3 ns | 3 ns | 3 ns |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6 ns | 6 ns | 6 ns |
| Factory Pack Quantity | 50 | 500 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns | 17 ns | 17 ns |
| Typical Turn On Delay Time | 8 ns | 8 ns | 8 ns |