PartNumber | APT60GA60JD60 | APT60GF120JDR | APT60GF120JRD |
Description | IGBT Modules FG, IGBT-COMBI, 600V, SOT-227 | ||
Manufacturer | Microchip | - | APT |
Product Category | IGBT Modules | - | Module |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Collector Emitter Voltage VCEO Max | 600 V | - | - |
Collector Emitter Saturation Voltage | 2 V | - | - |
Continuous Collector Current at 25 C | 112 A | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Pd Power Dissipation | 356 W | - | - |
Package / Case | SOT-227-4 | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tube | - | - |
Height | 9.6 mm | - | - |
Length | 38.2 mm | - | - |
Operating Temperature Range | - 55 C to + 150 C | - | - |
Width | 25.4 mm | - | - |
Brand | Microchip / Microsemi | - | - |
Mounting Style | Chassis Mount | - | - |
Maximum Gate Emitter Voltage | 30 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | IGBTs | - | - |
Tradename | POWER MOS 8, ISOTOP | - | - |
Unit Weight | 1.058219 oz | - | - |