APT30GN60BDQ2G vs APT30GF60JU3 vs APT30GF60JU2

 
PartNumberAPT30GN60BDQ2GAPT30GF60JU3APT30GF60JU2
DescriptionIGBT Transistors FG, IGBT, 600V, TO-247, RoHSIGBT Modules Power Module - IGBTIGBT Modules Power Module - IGBT
ManufacturerMicrochipMicrochipMicrochip
Product CategoryIGBT TransistorsIGBT ModulesIGBT Modules
RoHSYYY
TechnologySi-Si
PackagingTube--
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Product TypeIGBT TransistorsIGBT ModulesIGBT Modules
Factory Pack Quantity15050
SubcategoryIGBTsIGBTsIGBTs
Product-IGBT Silicon ModulesIGBT Silicon Modules
Collector Emitter Voltage VCEO Max-600 V600 V
Collector Emitter Saturation Voltage-2.1 V2.1 V
Continuous Collector Current at 25 C-58 A58 A
Gate Emitter Leakage Current-100 nA100 nA
Pd Power Dissipation-192 W192 W
Package / Case-SOT-227-4SOT-227-4
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Height-9.6 mm9.6 mm
Length-38.2 mm38.2 mm
Operating Temperature Range-- 55 C to + 150 C- 55 C to + 150 C
Width-25.4 mm25.4 mm
Mounting Style-Chassis MountChassis Mount
Maximum Gate Emitter Voltage-20 V20 V
Tradename-ISOTOPISOTOP
Unit Weight-1.058219 oz1.058219 oz
Configuration--Single
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