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APT30GN60BDQ2G

APT30GN60BDQ2G
Mfr. #:
APT30GN60BDQ2G
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT30GN60BDQ2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT30GN60BDQ2G DatasheetAPT30GN60BDQ2G Datasheet (P4-P6)APT30GN60BDQ2G Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Tags
APT30GN, APT30G, APT30, APT3, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 63A 203000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
APT30GN60 Series 600 V 63 A 203 W 165 nC Field Stop - Trench Gate IGBT TO-247-3
***rochip
IGBT Fieldstop Low Frequency Combi 600 V 30 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip N Channel 600 Volt 55 Amp 3-Pin 3+ Tab TO-247AA
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 62 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:55A; Collector Emitter Saturation Voltage, Vce(sat):2.3V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50W; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:33ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
IRG4PC50FPBF, IGBT Transistor, 70 A 600V, 3-Pin TO-247AC
***ure Electronics
IRG4PC50 Series 600 V 39 A N-Channel Fast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.6 V Current release time: 230 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time Max:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:280A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UDPBF
***hine Compare
Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC
*** Electronics
IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
New short circuit rugged "K" series
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***(Formerly Allied Electronics)
IGBT N-Channel 30A 600V TO-247
***ark
Igbt, Single, 600V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
***nell
IGBT, 600V, 80A, 175DEG C, 375W; Available until stocks are exhausted Alternative available
***ical
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
Parte # Mfg. Descripción Valores Precio
APT30GN60BDQ2G
DISTI # APT30GN60BDQ2G-ND		Microsemi CorporationIGBT 600V 63A 203W TO247
RoHS: Compliant
Min Qty: 112
Container: Tube		Temporarily Out of Stock
  • 112:$4.9180
APT30GN60BDQ2G
DISTI # APT30GN60BDQ2G		Microchip Technology IncTrans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT30GN60BDQ2G)
RoHS: Compliant
Min Qty: 112
Container: Tube		Americas - 0
  • 560:$2.7900
  • 1120:$2.7900
  • 336:$2.8900
  • 224:$2.9900
  • 112:$3.0900
APT30GN60BDQ2G
DISTI # 494-APT30GN60BDQ2G		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
RoHS: Compliant		115
  • 1:$6.2700
Imagen Parte # Descripción
APT30GN60BDQ2G

Mfr.#: APT30GN60BDQ2G

OMO.#: OMO-APT30GN60BDQ2G

 IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
APT30GN60BG

Mfr.#: APT30GN60BG

OMO.#: OMO-APT30GN60BG

 IGBT Transistors FG, IGBT, 600V, 30A, TO-247, RoHS
APT30GN60BG

Mfr.#: APT30GN60BG

OMO.#: OMO-APT30GN60BG-MICROSEMI

 IGBT Transistors
APT30GN60BDQ2G

Mfr.#: APT30GN60BDQ2G

OMO.#: OMO-APT30GN60BDQ2G-MICROSEMI

 IGBT 600V 63A 203W TO247
APT30GN60SDQ2G

Mfr.#: APT30GN60SDQ2G

OMO.#: OMO-APT30GN60SDQ2G-1190

 POWER IGBT TRANSISTOR
APT30GN60SG

Mfr.#: APT30GN60SG

OMO.#: OMO-APT30GN60SG-1190

 Nuevo y original
Disponibilidad
Valores:
115
En orden:
2098
Ingrese la cantidad:
El precio actual de APT30GN60BDQ2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,27 US$
6,27 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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