2SA1812T100Q vs 2SA1812 vs 2SA1812 T100Q , R1161N18

 
PartNumber2SA1812T100Q2SA18122SA1812 T100Q , R1161N18
DescriptionBipolar Transistors - BJT PNP 400V 0.5A
ManufacturerROHM SemiconductorUTG-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 400 V--
Collector Base Voltage VCBO- 400 V--
Emitter Base Voltage VEBO- 7 V--
Maximum DC Collector Current- 1 A--
Gain Bandwidth Product fT12 MHz--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max270--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.5 mm--
BrandROHM Semiconductor--
Continuous Collector Current- 0.5 A--
DC Collector/Base Gain hfe Min82--
Pd Power Dissipation2 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
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