 |  | | |
| PartNumber | 2N6190 | 2N6191 | 2N619 |
| Description | Bipolar Transistors - BJT Small Signal Transistor | Bipolar Transistors - BJT Power BJT | |
| Manufacturer | Central Semiconductor | Microchip | Central Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | N | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-39-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 5 A | - | - |
| Gain Bandwidth Product fT | 30 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Series | 2N6190 | - | 2N6190 |
| DC Current Gain hFE Max | 120 at 2 A, 2 V | - | - |
| Packaging | Bulk | Foil Bag | Bulk |
| Brand | Central Semiconductor | Microchip / Microsemi | - |
| DC Collector/Base Gain hfe Min | 30 at 2 A, 2 V | - | - |
| Pd Power Dissipation | 10 W | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 500 | 1 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 2N6190 PBFREE | - | - |
| Part Aliases | - | - | BK |