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| PartNumber | 2N5551RL1G | 2N5551RL1 | 2N5551RLG |
| Description | Bipolar Transistors - BJT 600mA 180V NPN | Bipolar Transistors - BJT 600mA 180V NPN | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | N | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 | TO-92-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 160 V | 160 V | - |
| Collector Base Voltage VCBO | 180 V | 180 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.25 V | 0.25 V | - |
| Maximum DC Collector Current | 0.6 A | 0.6 A | - |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2N5551 | - | - |
| Height | 5.33 mm | 5.33 mm | - |
| Length | 5.2 mm | 5.2 mm | - |
| Packaging | Reel | Reel | - |
| Width | 4.19 mm | 4.19 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 0.6 A | 0.6 A | - |
| DC Collector/Base Gain hfe Min | 80 | 80 | - |
| Pd Power Dissipation | 625 mW | 625 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2000 | 2000 | - |
| Subcategory | Transistors | Transistors | - |