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| PartNumber | 2N3501 | 2N3501/TR | 2N3501AJANTX |
| Description | Bipolar Transistors - BJT NPN Gen Pur SS | Bipolar Transistors - BJT | |
| Manufacturer | Central Semiconductor | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | N | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-39-3 | TO-39-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 150 V | 150 V | - |
| Collector Base Voltage VCBO | 150 V | 150 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.4 V | 0.4 V | - |
| Maximum DC Collector Current | 0.3 A | 300 mA | - |
| Gain Bandwidth Product fT | 150 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 200 C | - |
| Series | 2N3501 | - | - |
| DC Current Gain hFE Max | 300 | 300 at 150 mA, 10 V | - |
| Height | 6.6 mm | - | - |
| Length | 9.4 mm | - | - |
| Packaging | Bulk | Reel | - |
| Width | 9.4 mm | - | - |
| Brand | Central Semiconductor | Microchip / Microsemi | - |
| Pd Power Dissipation | 1000 mW | 1 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 500 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 2N3501 PBFREE | - | - |
| Unit Weight | 0.035486 oz | - | - |
| Technology | - | Si | - |
| DC Collector/Base Gain hfe Min | - | 20 at 300 mA, 10 V | - |