T1G4012036-FL

T1G4012036-FL
Mfr. #:
T1G4012036-FL
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
T1G4012036-FL Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
T1G4012036-FL más información
Atributo del producto
Valor de atributo
Fabricante
TriQuint (Qorvo)
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
T1G
embalaje
Bandeja
Alias ​​de parte
1096176
Estilo de montaje
SMD / SMT
Tecnología
GaN SiC
Tipo transistor
HEMT
Ganar
18.4 dB
Potencia de salida
24 W
Disipación de potencia Pd
117 W
Frecuencia de operación
3.3 GHz
Id-corriente-de-drenaje-continua
12 A
Vds-Drain-Source-Breakdown-Voltage
36 V
Polaridad del transistor
Canal N
Voltaje de puerta de drenaje máximo
- 2.9 V
Tags
T1G4012036-F, T1G401, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
T1G4012036-FL
DISTI # 772-T1G4012036-FL
QorvoRF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
RoHS: Compliant
0
  • 25:$338.4400
Imagen Parte # Descripción
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS-EVB1

Mfr.#: T1G4012036-FS-EVB1

OMO.#: OMO-T1G4012036-FS-EVB1-1190

Nuevo y original
T1G4012036-XCC-1-FS

Mfr.#: T1G4012036-XCC-1-FS

OMO.#: OMO-T1G4012036-XCC-1-FS-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de T1G4012036-FL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
507,66 US$
507,66 US$
10
482,28 US$
4 822,77 US$
100
456,89 US$
45 689,40 US$
500
431,51 US$
215 755,50 US$
1000
406,13 US$
406 128,00 US$
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