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T1G4012036-FL

T1G4012036-FL
Mfr. #:
T1G4012036-FL
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
T1G4012036-FL Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
T1G4012036-FL más información
Atributo del producto
Valor de atributo
Fabricante:
Cree, Inc.
Categoria de producto:
Transistores RF JFET
RoHS:
Y
Tipo de transistor:
HEMT
Tecnología:
GaN SiC
Ganar:
17 dB
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Id - Corriente de drenaje continua:
7.5 A
Potencia de salida:
170 W
Temperatura máxima de funcionamiento:
+ 225 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
H-37265J-2
Embalaje:
Carrete
Configuración:
Único
Frecuencia de operación:
2620 MHz to 2690 MHz
Marca:
Velocidad de lobo / Cree
Tipo de producto:
Transistores RF JFET
Cantidad de paquete de fábrica:
250
Subcategoría:
Transistores
Vgs th - Voltaje umbral puerta-fuente:
- 3.8 V
Tags
T1G4012036-F, T1G401, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
T1G4012036-FL
DISTI # 772-T1G4012036-FL		QorvoRF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
RoHS: Compliant		0
  • 25:$338.4400
Imagen Parte # Descripción
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL

 RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS

 RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL-318

 RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS-318

 RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS-EVB1

Mfr.#: T1G4012036-FS-EVB1

OMO.#: OMO-T1G4012036-FS-EVB1-1190

 Nuevo y original
T1G4012036-XCC-1-FS

Mfr.#: T1G4012036-XCC-1-FS

OMO.#: OMO-T1G4012036-XCC-1-FS-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de T1G4012036-FL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
375,00 US$
375,00 US$
25
338,44 US$
8 461,00 US$
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