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STGW8M120DF3

STGW8M120DF3
Mfr. #:
STGW8M120DF3
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW8M120DF3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGW8M120DF3 más información STGW8M120DF3 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.85 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
16 A
Pd - Disipación de energía:
167 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGW8M120DF3
Embalaje:
Tubo
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
250 uA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
600
Subcategoría:
IGBT
Unidad de peso:
0.211644 oz
Tags
STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
***ical
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1200V, 16A, TO-247-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Parte # Mfg. Descripción Valores Precio
STGW8M120DF3
DISTI # V99:2348_18695401		STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 1:$3.6047
STGW8M120DF3
DISTI # 497-17619-ND		STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2520:$1.7500
  • 510:$2.1787
  • 120:$2.5594
  • 30:$2.9530
  • 10:$3.1240
  • 1:$3.4800
STGW8M120DF3
DISTI # 33130727		STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 4:$3.6047
STGW8M120DF3
DISTI # STGW8M120DF3		STMicroelectronicsSTMSTGW8M120DF3 - Trays (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 1800:$1.4900
  • 3000:$1.4900
  • 6000:$1.4900
  • 600:$1.5900
  • 1200:$1.5900
STGW8M120DF3
DISTI # STGW8M120DF3		STMicroelectronicsSTMSTGW8M120DF3 (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 30		Europe - 0
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 60:€1.6900
  • 30:€1.7900
STGW8M120DF3
DISTI # 38AC2424		STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°CRoHS Compliant: Yes0
  • 500:$2.0900
  • 250:$2.3300
  • 100:$2.4500
  • 50:$2.5800
  • 25:$2.7100
  • 10:$2.8400
  • 1:$3.3300
STGW8M120DF3
DISTI # 511-STGW8M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
RoHS: Compliant		600
  • 1:$3.3000
  • 10:$2.8100
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
STGW8M120DF3
DISTI # IGBT2611		STMicroelectronicsIGBT 1200V8A 1,85VTO-247Stock DE - 0Stock HK - 0Stock US - 0
  • 600:$1.8600
STGW8M120DF3
DISTI # 2797964		STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-3
RoHS: Compliant		0
  • 2520:$2.8000
  • 1020:$2.9400
  • 510:$3.4900
  • 120:$4.3100
  • 30:$4.7300
  • 1:$5.8800
STGW8M120DF3
DISTI # 2797964		STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-30
  • 500:£1.5200
  • 250:£1.6900
  • 100:£1.7800
  • 10:£2.0500
  • 1:£2.7300
Imagen Parte # Descripción
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3

 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3-STMICROELECTRONICS

 TRENCH GATE FIELD-STOP IGBT M SE
Disponibilidad
Valores:
598
En orden:
2581
Ingrese la cantidad:
El precio actual de STGW8M120DF3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,30 US$
3,30 US$
10
2,81 US$
28,10 US$
100
2,43 US$
243,00 US$
250
2,31 US$
577,50 US$
500
2,07 US$
1 035,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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