PartNumber | STGW80H65DFB-4 | STGW80H65FB | STGW80H65DFB |
Description | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed | IGBT Transistors Trench gte FieldStop IGBT 650V 80A |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Technology | Si | Si | Si |
Series | STGW80H65DFB-4 | STGW80H65FB | STGW80H65DFB |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | IGBTs | IGBTs | IGBTs |
RoHS | - | Y | Y |
Package / Case | - | TO-247-3 | TO-247-3 |
Mounting Style | - | Through Hole | Through Hole |
Configuration | - | Single | Single |
Collector Emitter Voltage VCEO Max | - | 650 V | 650 V |
Collector Emitter Saturation Voltage | - | 1.6 V | 1.6 V |
Maximum Gate Emitter Voltage | - | 20 V | 20 V |
Continuous Collector Current at 25 C | - | 120 A | 120 A |
Pd Power Dissipation | - | 469 W | 469 W |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Packaging | - | Tube | Tube |
Continuous Collector Current Ic Max | - | 80 A | 80 A |
Gate Emitter Leakage Current | - | 250 nA | 250 nA |
Unit Weight | - | 1.340411 oz | 1.340411 oz |