SIHP38N60E-GE3

SIHP38N60E-GE3
Mfr. #:
SIHP38N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHP38N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP38N60E-GE3 DatasheetSIHP38N60E-GE3 Datasheet (P4-P6)SIHP38N60E-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIHP38N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220AB-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
43 A
Rds On - Resistencia de la fuente de drenaje:
56 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
122 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
313 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
50 ns
Tipo de producto:
MOSFET
Hora de levantarse:
58 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
116 ns
Tiempo típico de retardo de encendido:
33 ns
Unidad de peso:
0.063493 oz
Tags
SIHP3, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 43A 3-Pin(3+Tab) TO-220AB
***i-Key
MOSFET N-CH 600V 43A TO220AB
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHP38N60E-GE3
DISTI # V99:2348_17597460
Vishay IntertechnologiesPower MOSFET180
  • 1000:$3.5200
  • 100:$4.7600
  • 25:$5.4060
  • 10:$5.8789
  • 1:$7.2248
SIHP38N60E-GE3
DISTI # SIHP38N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 43A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
626In Stock
  • 1000:$3.7521
  • 100:$4.9472
  • 25:$5.6976
  • 10:$5.9760
  • 1:$6.6100
SIHP38N60E-GE3
DISTI # 31992690
Vishay IntertechnologiesPower MOSFET550
  • 4000:$3.4986
  • 2000:$3.6531
  • 1000:$3.7521
SIHP38N60E-GE3
DISTI # 31985472
Vishay IntertechnologiesPower MOSFET180
  • 1000:$3.5200
  • 100:$4.7600
  • 25:$5.4060
  • 10:$5.8789
  • 2:$7.2248
SIHP38N60E-GE3
DISTI # SIHP38N60E-GE3
Vishay IntertechnologiesPower MOSFET N-Channel 600V 43A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP38N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 1000
  • 10000:$3.2900
  • 6000:$3.3900
  • 4000:$3.4900
  • 2000:$3.6900
  • 1000:$3.7900
SIHP38N60E-GE3
DISTI # SIHP38N60E-GE3
Vishay IntertechnologiesPower MOSFET N-Channel 600V 43A 3-Pin TO-220AB (Alt: SIHP38N60E-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€3.2900
  • 500:€3.3900
  • 50:€3.4900
  • 100:€3.4900
  • 25:€3.8900
  • 10:€4.7900
  • 1:€6.0900
SIHP38N60E-GE3
DISTI # 78-SIHP38N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant
929
  • 1:$6.6200
  • 10:$5.9600
  • 25:$5.4300
  • 100:$4.9000
  • 250:$4.5100
  • 500:$4.1100
Imagen Parte # Descripción
FCP067N65S3

Mfr.#: FCP067N65S3

OMO.#: OMO-FCP067N65S3

MOSFET 650V 44A N-Channel SuperFET MOSFET
695402250128

Mfr.#: 695402250128

OMO.#: OMO-695402250128

Pluggable Terminal Blocks WR-LECO 2Pin, Angled 3A Hermaphroditic
FCP067N65S3

Mfr.#: FCP067N65S3

OMO.#: OMO-FCP067N65S3-ON-SEMICONDUCTOR

MOSFET N-CH 650V 44A TO220
AT42QT1010-TSHR

Mfr.#: AT42QT1010-TSHR

OMO.#: OMO-AT42QT1010-TSHR-MICROCHIP-TECHNOLOGY

Capacitive Touch Sensors One-Channel Touch Sensor IC
695402250128

Mfr.#: 695402250128

OMO.#: OMO-695402250128-WURTH-ELECTRONICS

CONN, HERMAPHRODITIC, 2POS, 1ROW, 2.54MM
Disponibilidad
Valores:
929
En orden:
2912
Ingrese la cantidad:
El precio actual de SIHP38N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,62 US$
6,62 US$
10
5,96 US$
59,60 US$
25
5,43 US$
135,75 US$
100
4,90 US$
490,00 US$
250
4,51 US$
1 127,50 US$
500
4,11 US$
2 055,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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