SI1029X-T1-GE3

Mfr. #:: SI1029X-T1-GE3
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI1029X-T1-GE3 Ficha de datos
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HTML Datasheet:: SI1029X-T1-GE3 Datasheet SI1029X-T1-GE3 Datasheet (P4-P6)SI1029X-T1-GE3 Datasheet (P7-P9)SI1029X-T1-GE3 Datasheet (P10)
ECAD Model:
Más información:: SI1029X-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SC-89-6

Número de canales:: 2 Channel

Polaridad del transistor:: Canal N, canal P

Vds - Voltaje de ruptura de drenaje-fuente:: 60 V

Id - Corriente de drenaje continua:: 500 mA

Rds On - Resistencia de la fuente de drenaje:: 1.4 Ohms, 4 Ohms

Vgs th - Voltaje umbral puerta-fuente:: 1 V

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 750 pC, 1700 pC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 280 mW

Configuración:: Doble

Modo de canal:: Mejora

Nombre comercial:: TrenchFET

Embalaje:: Carrete

Altura:: 0.6 mm

Longitud:: 1.66 mm

Serie:: SI1

Tipo de transistor:: 1 N-Channel, 1 P-Channel

Ancho:: 1.2 mm

Marca:: Vishay / Siliconix

Transconductancia directa - Mín .:: 200 mS, 100 mS

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 20 ns, 35 ns

Tiempo típico de retardo de encendido:: 15 ns, 20 ns

Parte # Alias:: SI1029X-GE3

Unidad de peso:: 0.001129 oz

Tags: SI1029X-T, SI1029, SI102, SI10, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1029X-T1-GE3 Más información

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI1029XT1GE3 DISTI # V72:2272_07432922	Vishay Intertechnologies	Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SC-89 T/R RoHS: Compliant	2	1:$0.5237
SI1029XT1GE3 DISTI # V36:1790_07432922	Vishay Intertechnologies	Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SC-89 T/R RoHS: Compliant	0	3000000:$0.1500 1500000:$0.1502 300000:$0.1605 30000:$0.1765 3000:$0.1790
SI1029X-T1-GE3 DISTI # SI1029X-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 60V SC89-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	70782In Stock	1000:$0.2022 500:$0.2617 100:$0.3331 10:$0.4460 1:$0.5200
SI1029X-T1-GE3 DISTI # SI1029X-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 60V SC89-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	70782In Stock	1000:$0.2022 500:$0.2617 100:$0.3331 10:$0.4460 1:$0.5200
SI1029X-T1-GE3 DISTI # SI1029X-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 60V SC89-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	69000In Stock	30000:$0.1478 15000:$0.1559 6000:$0.1675 3000:$0.1790
SI1029XT1GE3 DISTI # 33941149	Vishay Intertechnologies	Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SC-89 T/R RoHS: Compliant	213000	3000:$0.2016
SI1029XT1GE3 DISTI # 32879721	Vishay Intertechnologies	Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SC-89 T/R RoHS: Compliant	3016	251:$0.3077
SI1029X-T1-GE3 DISTI # SI1029X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SOT-563F T/R (Alt: SI1029X-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	150000:$0.0924 75000:$0.0949 30000:$0.0975 15000:$0.1046 9000:$0.1206 6000:$0.1452 3000:$0.1779
SI1029X-T1-GE3 DISTI # SI1029X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SOT-563F T/R - Tape and Reel (Alt: SI1029X-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.1409 18000:$0.1439 12000:$0.1489 6000:$0.1549 3000:$0.1599
SI1029X-T1-GE3 DISTI # SI1029X-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SOT-563F T/R (Alt: SI1029X-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1209 18000:€0.1299 12000:€0.1409 6000:€0.1639 3000:€0.2399
SI1029X-T1-GE3 DISTI # 16P3679	Vishay Intertechnologies	Trans MOSFET N/P-CH 60V 0.305A/0.19A 6-Pin SOT-563F T/R - Product that comes on tape, but is not reeled (Alt: 16P3679) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.2350 500:$0.3040 250:$0.3360 100:$0.3690 50:$0.4340 25:$0.4980 1:$0.6630
SI1029X-T1-GE3 DISTI # 16P3679	Vishay Intertechnologies	DUAL N/P CHANNEL MOSFET, 60V, SC-89,Transistor Polarity:N and P Channel,Continuous Drain Current Id:305mA,Drain Source Voltage Vds:60V,On Resistance Rds(on):1.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes	3016	1000:$0.1700 250:$0.1840 500:$0.1840 1:$0.2000 25:$0.2000 50:$0.2000 100:$0.2000
SI1029X-T1-GE3. DISTI # 96AC3672	Vishay Intertechnologies	60V (D-S) P&N COMP MOSFET W/ESD PROTECT ROHS COMPLIANT: NO	3000	50000:$0.1420 30000:$0.1490 20000:$0.1600 10000:$0.1710 5000:$0.1850 1:$0.1900
SI1029X-T1-GE3 DISTI # 70459642	Vishay Siliconix	SI1029X-T1-GE3 Dual N/P-channel MOSFET Transistor,0.19 A,0.3 A,60V,6-Pin SC-89 RoHS: Compliant	0	3000:$0.6800 6000:$0.4470
SI1029X-T1-GE3	Vishay Intertechnologies	Dual N & P Channel 60 V 1.4 / 4 Ohm Surface Mount Mosfet - SC-89-6 RoHS: Compliant	306000Reel	3000:$0.1550 6000:$0.1470
SI1029X-T1-GE3 DISTI # 781-SI1029X-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR RoHS: Compliant	17440	1:$0.5200 10:$0.3970 100:$0.2940 500:$0.2420 1000:$0.1870 3000:$0.1700 6000:$0.1590 9000:$0.1480
SI1029X-T1-GE3 DISTI # 7879055P	Vishay Intertechnologies	MOSFET DUAL N/P-CH 60V 0.3/0.19A SOT563F, RL	6220	1500:£0.1400 760:£0.1810 160:£0.2210
SI1029X-T1-GE3 DISTI # 2101477	Vishay Intertechnologies	MOSFET, NP CH, 60V, SC-89 RoHS: Compliant	416	1000:$0.3050 500:$0.3950 100:$0.5020 10:$0.6720 1:$0.7800
SI1029X-T1-GE3 DISTI # XSFP00000090647	Vishay Siliconix	RoHS: Compliant	246000 in Stock0 on Order	246000:$0.2067 3000:$0.2214
SI1029X-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR RoHS: Compliant	Americas - 123000	3000:$0.1600 6000:$0.1520 12000:$0.1470 18000:$0.1430
SI1029X-T1-GE3 DISTI # 2101477	Vishay Intertechnologies	MOSFET, NP CH, 60V, SC-89	726	500:£0.1890 250:£0.2100 100:£0.2300 10:£0.3470 1:£0.4640

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Disponibilidad

Valores:: 17
En orden:: 2000
Ingrese la cantidad:

El precio actual de SI1029X-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,52 US$~~; ~~0,52 US$~~

10: ~~0,40 US$~~; ~~3,97 US$~~

100: ~~0,29 US$~~; ~~29,40 US$~~

500: ~~0,24 US$~~; ~~121,00 US$~~

1000: ~~0,19 US$~~; ~~187,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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SI1029X-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes