IRF540ZLPBF

IRF540ZLPBF
Mfr. #:
IRF540ZLPBF
Fabricante:
Infineon Technologies
Descripción:
Darlington Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF540ZLPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
IRF540ZLPBF más información
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
embalaje
Tubo
Unidad de peso
0.084199 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
I2PAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
92 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
39 ns
Hora de levantarse
51 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
36 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
26.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
43 ns
Tiempo de retardo de encendido típico
15 ns
Qg-Gate-Charge
42 nC
Modo de canal
Mejora
Tags
IRF540Z, IRF540, IRF54, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
IRF540N/Z Advanced HEXFET® Power MOSFETs
Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descripción Valores Precio
IRF540ZLPBF
DISTI # IRF540ZLPBF-ND
Infineon Technologies AGMOSFET N-CH 100V 36A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube
531In Stock
  • 1000:$0.5940
  • 500:$0.7524
  • 100:$0.9702
  • 10:$1.2280
  • 1:$1.3900
IRF540ZLPBF
DISTI # IRF540ZLPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF540ZLPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tube
Americas - 0
  • 4000:$0.4139
  • 6000:$0.3999
  • 10000:$0.3849
  • 20000:$0.3719
  • 40000:$0.3649
IRF540ZLPBF
DISTI # SP001559652
Infineon Technologies AGTrans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-262 (Alt: SP001559652)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€0.6619
  • 10:€0.5879
  • 25:€0.5299
  • 50:€0.4809
  • 100:€0.4409
  • 500:€0.4069
  • 1000:€0.3779
IRF540ZLPBF
DISTI # 49AC0323
Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes3430
  • 1:$1.1900
  • 10:$1.0100
  • 100:$0.7750
  • 500:$0.6850
  • 1000:$0.5400
IRF540ZLPBF
DISTI # 70017276
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 21 Milliohms,ID 36A,TO-262,PD 92W,VGS +/-20
RoHS: Compliant
0
  • 1:$2.5800
  • 2:$2.5280
  • 5:$2.4510
  • 10:$2.3480
  • 25:$2.1930
IRF540ZLPBF
DISTI # 942-IRF540ZLPBF
Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
RoHS: Compliant
1348
  • 1:$1.1900
  • 10:$1.0100
  • 100:$0.7750
  • 500:$0.6850
  • 1000:$0.5400
IRF540ZLPBF
DISTI # 2839479
Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262
RoHS: Compliant
3430
  • 5:$1.9500
  • 25:$1.7000
  • 100:$1.3900
  • 250:$1.1700
  • 500:$1.0100
  • 1000:$0.9600
  • 5000:$0.9100
IRF540ZLPBF
DISTI # 2839479
Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262
RoHS: Compliant
3495
  • 5:£0.8680
  • 25:£0.7800
  • 100:£0.5990
  • 250:£0.5640
  • 500:£0.5280
Imagen Parte # Descripción
IRF540NLPBF

Mfr.#: IRF540NLPBF

OMO.#: OMO-IRF540NLPBF

MOSFET MOSFT 100V 33A 44mOhm 47.3nC
IRF540(N)

Mfr.#: IRF540(N)

OMO.#: OMO-IRF540-N--1190

Nuevo y original
IRF540N

Mfr.#: IRF540N

OMO.#: OMO-IRF540N-1190

MOSFET Transistor, N-Channel, TO-220AB
IRF540NPBF,IRF5305PBF

Mfr.#: IRF540NPBF,IRF5305PBF

OMO.#: OMO-IRF540NPBF-IRF5305PBF-1190

Nuevo y original
IRF540NSTRLPBF,IRF540NS,

Mfr.#: IRF540NSTRLPBF,IRF540NS,

OMO.#: OMO-IRF540NSTRLPBF-IRF540NS--1190

Nuevo y original
IRF540P

Mfr.#: IRF540P

OMO.#: OMO-IRF540P-1190

Nuevo y original
IRF540PBF,IRF540

Mfr.#: IRF540PBF,IRF540

OMO.#: OMO-IRF540PBF-IRF540-1190

Nuevo y original
IRF543FI

Mfr.#: IRF543FI

OMO.#: OMO-IRF543FI-1190

Nuevo y original
IRF543NS

Mfr.#: IRF543NS

OMO.#: OMO-IRF543NS-1190

Nuevo y original
IRF540ZSTRRPBF

Mfr.#: IRF540ZSTRRPBF

OMO.#: OMO-IRF540ZSTRRPBF-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de IRF540ZLPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,55 US$
0,55 US$
10
0,52 US$
5,20 US$
100
0,49 US$
49,26 US$
500
0,47 US$
232,60 US$
1000
0,44 US$
437,90 US$
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