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A2T21H360-24SR6

A2T21H360-24SR6
Mfr. #:
A2T21H360-24SR6
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2T21H360-24SR6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Tecnología:
Si
Embalaje:
Carrete
Marca:
NXP / Freescale
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
150
Subcategoría:
MOSFET
Parte # Alias:
935318247128
Unidad de peso:
0.303504 oz
Tags
A2T21H3, A2T21H, A2T21, A2T2, A2T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronic Components
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V
***W
RF Power Transistor,2110 to 2170 MHz, 301 W, Typ Gain in dB is 16.2 @ 2140 MHz, 28 V, LDMOS, SOT1800
***et
Transistor RF FET N-CH 65V 2110MHz to 2170MHz 6-Pin NI-1230S T/R
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ure Electronics
P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23
***ical
Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
***ark
N CHANNEL MOSFET, 200V, 17A SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No
***SIT Distribution GmbH
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA
***emi
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
***ment14 APAC
MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
***roFlash
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
***emi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ
***ure Electronics
Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
***el Electronic
ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
***ment14 APAC
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
Parte # Mfg. Descripción Valores Precio
A2T21H360-24SR6
DISTI # A2T21H360-24SR6-ND		NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$160.8065
A2T21H360-24SR6
DISTI # A2T21H360-24SR6		Avnet, Inc.Trans MOSFET N-CH 65V 6-Pin NI-1230S T/R (Alt: A2T21H360-24SR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel		Europe - 0
  • 150:€161.7900
  • 300:€155.7900
  • 600:€150.1900
  • 900:€145.0900
  • 1500:€140.1900
A2T21H360-24SR6
DISTI # A2T21H360-24SR6		Avnet, Inc.Trans MOSFET N-CH 65V 6-Pin NI-1230S T/R - Tape and Reel (Alt: A2T21H360-24SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 150:$176.1900
  • 300:$169.2900
  • 600:$162.6900
  • 900:$156.7900
  • 1500:$153.7900
A2T21H360-24SR6
DISTI # 841-A2T21H360-24SR6		NXP SemiconductorsRF MOSFET Transistors A2T21H360-24S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant		0
  • 150:$157.1900
A2T21H360-24SR6
DISTI # A2T21H360-24SR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		100
  • 150:$160.1600
Imagen Parte # Descripción
A2T21H360-24SR6

Mfr.#: A2T21H360-24SR6

OMO.#: OMO-A2T21H360-24SR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V
A2T21H360-23NR6

Mfr.#: A2T21H360-23NR6

OMO.#: OMO-A2T21H360-23NR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V
A2T21H360-24SR6

Mfr.#: A2T21H360-24SR6

OMO.#: OMO-A2T21H360-24SR6-NXP-SEMICONDUCTORS

 IC TRANS RF LDMOS
A2T21H360-23NR6

Mfr.#: A2T21H360-23NR6

OMO.#: OMO-A2T21H360-23NR6-NXP-SEMICONDUCTORS

 RF TRANS 2.1GHZ 360W OM1230-4L2S
A2T21H360-23N

Mfr.#: A2T21H360-23N

OMO.#: OMO-A2T21H360-23N-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de A2T21H360-24SR6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
176,85 US$
176,85 US$
5
172,90 US$
864,50 US$
10
169,37 US$
1 693,70 US$
25
166,86 US$
4 171,50 US$
50
160,81 US$
8 040,50 US$
100
157,19 US$
15 719,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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