SI9410BDY-T1-GE3

SI9410BDY-T1-GE3
Mfr. #:
SI9410BDY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI9410BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI9410BDY-T1-GE3 DatasheetSI9410BDY-T1-GE3 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI9
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI9410BDY-GE3
Unidad de peso:
0.017870 oz
Tags
SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
***i-Key
MOSFET N-CH 30V 6.2A 8SOIC
***ukat
N-Ch 30V 8,1A 2,5W 0,024R SO8
***ment14 APAC
MOSFET, N CH, 30V, 8.1A , SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited
Parte # Mfg. Descripción Valores Precio
SI9410BDY-T1-GE3
DISTI # SI9410BDY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI9410BDY-T1-GE3
    DISTI # 781-SI9410BDY-GE3
    Vishay IntertechnologiesMOSFET 30V 8.1A 2.5W 24mohm @ 10V
    RoHS: Compliant
    0
      Imagen Parte # Descripción
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
      SI9410BDY-T1-GE3

      Mfr.#: SI9410BDY-T1-GE3

      OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
      SI9410BDY-T1-E3

      Mfr.#: SI9410BDY-T1-E3

      OMO.#: OMO-SI9410BDY-T1-E3-VISHAY

      IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
      SI9410BDY

      Mfr.#: SI9410BDY

      OMO.#: OMO-SI9410BDY-1190

      POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
      SI9410BDY-T1

      Mfr.#: SI9410BDY-T1

      OMO.#: OMO-SI9410BDY-T1-1190

      MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
      SI9410BDY-T1-E3.

      Mfr.#: SI9410BDY-T1-E3.

      OMO.#: OMO-SI9410BDY-T1-E3--1190

      Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de SI9410BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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