OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SI9410BDY-T1-E3

SI9410BDY-T1-E3
Mfr. #:
SI9410BDY-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI9410BDY-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI9410BDY-T1-E3 DatasheetSI9410BDY-T1-E3 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI9
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI9410BDY-E3
Unidad de peso:
0.017870 oz
Tags
SI9410BDY-T, SI9410BD, SI9410B, SI9410, SI941, SI94, SI9
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC N T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.1A; On Resistance, Rds(on):24mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, N REEL 2500; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6.2A; Resistance, Rds On:0.024ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:30A; N-channel Gate Charge:15nC; No. of Pins:8; Power, Pd:1.5W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 10V:0.024ohm; Resistance, Rds on @ Vgs = 4.5V:0.033ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:11ns; Time, Rise:15ns; Time, t Off:30ns; Time, t On:10ns; Transistors, No. of:1; Voltage, Vds Max:30V; Width, Tape:12mm
Parte # Mfg. Descripción Valores Precio
SI9410BDY-T1-E3
DISTI # SI9410BDY-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI9410BDY-T1-E3
    DISTI # SI9410BDY-T1-E3CT-ND    		Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI9410BDY-T1-E3
      DISTI # SI9410BDY-T1-E3DKR-ND      		Vishay SiliconixMOSFET N-CH 30V 6.2A 8SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI9410BDY-T1-E3
        DISTI # 781-SI9410BDY-T1-E3        		Vishay IntertechnologiesMOSFET 30V 8.1A 0.024Ohm
        RoHS: Compliant        		0
          SI9410BDY-T1
          DISTI # 781-SI9410BDY          		Vishay IntertechnologiesMOSFET 30V 8.1A 2.5W
          RoHS: Not compliant          		0
            SI9410BDY-T1-E3Vishay Intertechnologies 1150
              SI9410BDY-T1-E3Vishay Intertechnologies 2066
                SI9410BDY-T1-E3Vishay Intertechnologies 2892
                  SI9410BDY-T1-E3Vishay Siliconix 1728
                    SI9410BDYT1E3Vishay Intertechnologies 
                    RoHS: Compliant                    		Europe - 2025
                      Imagen Parte # Descripción
                      SI9410BDY-T1-E3

                      Mfr.#: SI9410BDY-T1-E3

                      OMO.#: OMO-SI9410BDY-T1-E3

                      		 MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
                      SI9410BDY-T1-GE3

                      Mfr.#: SI9410BDY-T1-GE3

                      OMO.#: OMO-SI9410BDY-T1-GE3

                      		 MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3
                      SI9410BDY-T1-GE3

                      Mfr.#: SI9410BDY-T1-GE3

                      OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY

                      		 IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V
                      SI9410BDY-T1-E3

                      Mfr.#: SI9410BDY-T1-E3

                      OMO.#: OMO-SI9410BDY-T1-E3-VISHAY

                      		 IGBT Transistors MOSFET 30V 8.1A 0.024Ohm
                      SI9410B

                      Mfr.#: SI9410B

                      OMO.#: OMO-SI9410B-1190

                      		 Nuevo y original
                      SI9410BDY

                      Mfr.#: SI9410BDY

                      OMO.#: OMO-SI9410BDY-1190

                      		 POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
                      SI9410BDY-T1

                      Mfr.#: SI9410BDY-T1

                      OMO.#: OMO-SI9410BDY-T1-1190

                      		 MOSFET RECOMMENDED ALT 781-SI4800BDY-E3
                      SI9410BDY-T1-E3.

                      Mfr.#: SI9410BDY-T1-E3.

                      OMO.#: OMO-SI9410BDY-T1-E3--1190

                      		 Nuevo y original
                      Disponibilidad
                      Valores:
                      Available
                      En orden:
                      3000
                      Ingrese la cantidad:
                      El precio actual de SI9410BDY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
                      Empezar con
                      Nuevos productos
                      More Newest Products
                      Top