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SI2308DS-T1-E3

SI2308DS-T1-E3
Mfr. #:
SI2308DS-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2308DS-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2308DS-T1-E3 DatasheetSI2308DS-T1-E3 Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.45 mm
Longitud:
2.9 mm
Serie:
SI2
Ancho:
1.6 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI2308DS-E3
Unidad de peso:
0.000282 oz
Tags
SI2308DS-T1-E, SI2308DS-T, SI2308D, SI2308, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET;N-Ch;VDSS 60V;RDS(ON) 0.125Ohm;ID 2A;TO-236 (SOT-23);PD 1.25W;VGS +/-20V
***ure Electronics
SI2308DS Series 60 V 0.15 Ohm 10 nC N-Channel Surface Mount Mosfet - SOT-23
***nell
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:2A; Resistance, Rds On:0.16ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:1.25W; Power, Pd:1.25W; Quantity, Reel:3000; SMD Marking:A8; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Min:1.5V; Width, External:3.05mm; Width, Tape:8mm
Parte # Mfg. Descripción Valores Precio
SI2308DS-T1-E3
DISTI # SI2308DS-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 60V 2A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI2308DS-T1-E3
    DISTI # SI2308DS-T1-E3CT-ND    		Vishay SiliconixMOSFET N-CH 60V 2A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI2308DS-T1-E3
      DISTI # SI2308DS-T1-E3DKR-ND      		Vishay SiliconixMOSFET N-CH 60V 2A SOT23-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI2308DS-T1-E3
        DISTI # 781-SI2308DS-E3        		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
        RoHS: Compliant        		0
          SI2308DS-T1
          DISTI # 781-SI2308DS          		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
          RoHS: Not compliant          		0
            SI2308DS-T1-E3
            DISTI # 1470158            		Vishay Intertechnologies 
            RoHS: Compliant            		0
            • 10:$0.9600
            SI2308DST1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
            RoHS: Compliant            		3865
              Imagen Parte # Descripción
              SI2308DS-T1-E3

              Mfr.#: SI2308DS-T1-E3

              OMO.#: OMO-SI2308DS-T1-E3

              		 MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
              SI2308DS

              Mfr.#: SI2308DS

              OMO.#: OMO-SI2308DS-1190

              		 Nuevo y original
              SI2308DS-T1

              Mfr.#: SI2308DS-T1

              OMO.#: OMO-SI2308DS-T1-1190

              		 MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
              SI2308DS-T1-E3

              Mfr.#: SI2308DS-T1-E3

              OMO.#: OMO-SI2308DS-T1-E3-VISHAY

              		 MOSFET N-CH 60V 2A SOT23-3
              SI2308DS-T1-E3/B02

              Mfr.#: SI2308DS-T1-E3/B02

              OMO.#: OMO-SI2308DS-T1-E3-B02-1190

              		 Nuevo y original
              SI2308DS-T1-ES , MAX6425

              Mfr.#: SI2308DS-T1-ES , MAX6425

              OMO.#: OMO-SI2308DS-T1-ES-MAX6425-1190

              		 Nuevo y original
              SI2308DS-T1-GE3

              Mfr.#: SI2308DS-T1-GE3

              OMO.#: OMO-SI2308DS-T1-GE3-1190

              		 N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
              Disponibilidad
              Valores:
              Available
              En orden:
              1000
              Ingrese la cantidad:
              El precio actual de SI2308DS-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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