SI2308DS-T1-GE3

SI2308DS-T1-GE3
Mfr. #:
SI2308DS-T1-GE3
Fabricante:
Vishay Intertechnologies
Descripción:
N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2308DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SI2308DS-T, SI2308D, SI2308, SI230, SI23, SI2
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
***
60V, 160 MOHMS@10V
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.25W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SI2308DS-T1-GE3
DISTI # 15R4904
Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):125mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:3V,Power Dissipation Pd:1.25W RoHS Compliant: Yes0
    SI2308DS-T1-GE3
    DISTI # 84R8024
    Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:1.25W RoHS Compliant: Yes0
    • 2500:$0.3430
    • 1000:$0.4340
    • 500:$0.4940
    • 250:$0.5760
    • 100:$0.6470
    • 50:$0.7330
    • 25:$0.8030
    • 1:$0.8970
    SI2308DS-T1-GE3
    DISTI # 781-SI2308DS-GE3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
    RoHS: Compliant
    0
      Imagen Parte # Descripción
      SI2308DS-T1-E3

      Mfr.#: SI2308DS-T1-E3

      OMO.#: OMO-SI2308DS-T1-E3

      MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
      SI2308DS

      Mfr.#: SI2308DS

      OMO.#: OMO-SI2308DS-1190

      Nuevo y original
      SI2308DS-T1

      Mfr.#: SI2308DS-T1

      OMO.#: OMO-SI2308DS-T1-1190

      MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
      SI2308DS-T1-E3

      Mfr.#: SI2308DS-T1-E3

      OMO.#: OMO-SI2308DS-T1-E3-VISHAY

      MOSFET N-CH 60V 2A SOT23-3
      SI2308DS-T1-E3/B02

      Mfr.#: SI2308DS-T1-E3/B02

      OMO.#: OMO-SI2308DS-T1-E3-B02-1190

      Nuevo y original
      SI2308DS-T1-ES , MAX6425

      Mfr.#: SI2308DS-T1-ES , MAX6425

      OMO.#: OMO-SI2308DS-T1-ES-MAX6425-1190

      Nuevo y original
      SI2308DS-T1-GE3

      Mfr.#: SI2308DS-T1-GE3

      OMO.#: OMO-SI2308DS-T1-GE3-1190

      N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de SI2308DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,51 US$
      0,51 US$
      10
      0,49 US$
      4,89 US$
      100
      0,46 US$
      46,31 US$
      500
      0,44 US$
      218,65 US$
      1000
      0,41 US$
      411,60 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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