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SIHB33N60E-GE3

SIHB33N60E-GE3
Mfr. #:
SIHB33N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB33N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB33N60E-GE3 DatasheetSIHB33N60E-GE3 Datasheet (P4-P6)SIHB33N60E-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHB33N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
33 A
Rds On - Resistencia de la fuente de drenaje:
99 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
100 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
278 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
E
Ancho:
9.65 mm
Marca:
Vishay / Siliconix
Otoño:
54 ns
Tipo de producto:
MOSFET
Hora de levantarse:
60 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
99 ns
Tiempo típico de retardo de encendido:
28 ns
Unidad de peso:
0.050717 oz
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin D2PAK
***Components
MOSFET 600V 33A E SERIES D2PAK
***ure Electronics
MOSFET 600V 99MOHM@10V 33A N-CH E-SRS
***ark
MOSFET, N CH, 600V, 33A, TO-263-3
***i-Key
MOSFET N-CH 600V 33A TO-263
***ronik
N-CH 600V 99mOhm 33A TO263
***
N-CH 600V T0-263
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHB33N60E-GE3
DISTI # V99:2348_09218863		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		802
  • 1000:$3.5080
  • 500:$3.8770
  • 250:$3.9920
  • 100:$4.1310
  • 10:$5.0710
  • 1:$6.7793
SIHB33N60E-GE3
DISTI # V36:1790_09218863		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000:$3.0270
SIHB33N60E-GE3
DISTI # SIHB33N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 2500:$3.1002
  • 1000:$3.2634
  • 500:$3.8695
  • 100:$4.5455
  • 10:$5.5480
  • 1:$6.1800
SIHB33N60E-GE3
DISTI # 33725812		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		802
  • 3:$6.7793
SIHB33N60E-GE3
DISTI # 33350541		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		573
  • 21:$3.8000
SIHB33N60E-GE3
DISTI # 29408606		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		126
  • 4:$2.6227
SIHB33N60E-GE3
DISTI # SIHB33N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Tape and Reel (Alt: SIHB33N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$2.7900
  • 6000:$2.8900
  • 4000:$2.9900
  • 2000:$3.0900
  • 1000:$3.1900
SIHB33N60E-GE3
DISTI # SIHB33N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK (Alt: SIHB33N60E-GE3)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€2.2900
  • 300:€2.4900
  • 200:€2.7900
  • 100:€3.3900
  • 50:€4.2900
SIHB33N60E-GE3
DISTI # 68W7037		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Bulk (Alt: 68W7037)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1000:$4.6300
  • 500:$4.6400
  • 100:$5.3000
  • 50:$5.6900
  • 25:$6.0600
  • 10:$6.4500
  • 1:$7.7800
SIHB33N60E-GE3
DISTI # 19X1931		Vishay IntertechnologiesPower MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 500:$4.1400
  • 100:$4.2800
  • 50:$4.5900
  • 25:$4.9000
  • 10:$5.2000
  • 1:$6.2700
SIHB33N60E-GE3
DISTI # 68W7037		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 33A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes573
  • 1:$2.4700
  • 10:$2.4700
  • 25:$2.4700
  • 50:$2.4700
  • 100:$2.4700
  • 500:$2.4700
SIHB33N60E-GE3
DISTI # 78-SIHB33N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1:$6.2100
  • 10:$5.1500
  • 100:$4.2300
  • 250:$4.1000
  • 500:$3.6800
  • 1000:$3.1000
  • 2000:$2.9500
SIHB33N60E-E3
DISTI # 78-SIHB33N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1000:$3.4600
  • 2000:$3.2900
SIHB33N60E-GE3
DISTI # 2364072		Vishay IntertechnologiesMOSFET, N-CH, 600V, 33A, D2PAK
RoHS: Compliant		0
  • 100:$6.8600
  • 10:$8.3700
  • 1:$9.3100
SIHB33N60E-GE3
DISTI # 2364072		Vishay IntertechnologiesMOSFET, N-CH, 600V, 33A, D2PAK508
  • 100:£3.8400
  • 10:£4.6700
  • 1:£6.2100
SIHB33N60E-GE3
DISTI # TMOSP10873		Vishay IntertechnologiesN-CH 600V 99mOhm 33A TO263
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 1000:$2.8800
SIHB33N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas - 1600
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    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de SIHB33N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    6,21 US$
    6,21 US$
    10
    5,15 US$
    51,50 US$
    100
    4,23 US$
    423,00 US$
    250
    4,10 US$
    1 025,00 US$
    500
    3,68 US$
    1 840,00 US$
    1000
    3,10 US$
    3 100,00 US$
    2000
    2,95 US$
    5 900,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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