IPW60R120P7XKSA1

Mfr. #:: IPW60R120P7XKSA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-CH 600V 26A TO247-3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPW60R120P7XKSA1 Ficha de datos
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Tags: IPW60R120, IPW60R12, IPW60R1, IPW60, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW60R120P7XKSA1 Descripción

***ure Electronics: Single N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - TO-247-3

***et: Trans MOSFET N-CH 650V 26A 3-Pin TO-247 Tube

***i-Key: MOSFET N-CH 600V 26A TO247-3

***ronik: N-CH 650V 78A 120mOhm TO247-3

***et Europe: HIGH POWER_NEW

***ark: Mosfet, N-Ch, 600V, 26A, 95W, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 26A, 95W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:95W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 600V, 26A, 95W, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:26A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:95W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPW60R120P7XKSA1 DISTI # V36:1790_18196279	Infineon Technologies AG	IPW60R120P7XKSA1	0
IPW60R120P7XKSA1 DISTI # IPW60R120P7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 26A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	2640:$2.0413 720:$2.5415 240:$2.9855 25:$3.4448 10:$3.6440 1:$4.0600
IPW60R120P7XKSA1 DISTI # IPW60R120P7XKSA1	Infineon Technologies AG	HIGH POWER_NEW - Rail/Tube (Alt: IPW60R120P7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$1.7900 2400:$1.7900 960:$1.8900 480:$1.9900 240:$2.0900
IPW60R120P7XKSA1 DISTI # 93AC7141	Infineon Technologies AG	MOSFET, N-CH, 600V, 26A, 95W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	100	500:$2.4400 250:$2.7200 100:$2.8700 50:$3.0200 25:$3.1600 10:$3.3100 1:$3.9000
IPW60R120P7XKSA1	Infineon Technologies AG	Single N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - TO-247-3 RoHS: Not Compliant	240Tube	240:$1.8900
IPW60R120P7XKSA1 DISTI # 726-IPW60R120P7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	474	1:$3.8600 10:$3.2800 100:$2.8400 250:$2.6900 500:$2.4200 1000:$2.0400 2500:$1.9400
IPW60R120P7XKSA1 DISTI # 2986489	Infineon Technologies AG	MOSFET, N-CH, 600V, 26A, 95W, TO-247 RoHS: Compliant	320	500:$2.9200 250:$3.2200 100:$3.3900 10:$3.8700 1:$4.9500
IPW60R120P7XKSA1 DISTI # 2986489	Infineon Technologies AG	MOSFET, N-CH, 600V, 26A, 95W, TO-247	322	100:£2.6200 10:£3.0100 1:£3.9800
IPW60R120P7XKSA1 DISTI # XSFP00000111482	Infineon Technologies AG	RoHS: Compliant	480 in Stock0 on Order	480:$3.4400 240:$3.7800

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Disponibilidad

Valores:: Available
En orden:: 3000
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El precio actual de IPW60R120P7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~2,68 US$~~; ~~2,68 US$~~

10: ~~2,55 US$~~; ~~25,51 US$~~

100: ~~2,42 US$~~; ~~241,65 US$~~

500: ~~2,28 US$~~; ~~1 141,15 US$~~

1000: ~~2,15 US$~~; ~~2 148,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPW60R120P7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes