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IXFH30N60P

IXFH30N60P
Mfr. #:
IXFH30N60P
Fabricante:
Littelfuse
Descripción:
MOSFET 600V 30A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH30N60P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH30N60P DatasheetIXFH30N60P Datasheet (P4-P5)
ECAD Model:
Más información:
IXFH30N60P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
30 A
Rds On - Resistencia de la fuente de drenaje:
240 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
500 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
21.46 mm
Longitud:
16.26 mm
Serie:
IXFH30N60
Tipo de transistor:
1 N-Channel
Ancho:
5.3 mm
Marca:
IXYS
Transconductancia directa - Mín .:
27 S
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
80 ns
Tiempo típico de retardo de encendido:
29 ns
Unidad de peso:
0.229281 oz
Tags
IXFH30N6, IXFH30, IXFH3, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 500 W 82 nC Through Hole Power Mosfet - TO-247
***inecomponents.com
Trans MOSFET N-CH 600V 30A 3-Pin (3+Tab) TO-247
***nell
MOSFET, N, TO-247; Transistor Type:HiPerFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:30A; Resistance, Rds On:0.24ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-247; Termination Type:Through Hole; Capacitance, Ciss Typ:4000pF; Charge, Gate N-channel:82nC; Pins, No. of:3; Power, Pd:500W; Thermal Resistance, Junction to Case A:0.25°C/W; Voltage, Vds Max:600V; Time, trr Max:200ns
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 126 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 25A I(D), 600V, 0.126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***ment14 APAC
MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:75A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) Power MOSFET (with fast diode)
***el Electronic
e200z650 MPC56xx Qorivva Microcontroller IC 32-Bit 116MHz 2MB (2M x 8) FLASH 208-MAPBGA (17x17)
***ure Electronics
N-Channel 600 V 88 mO Flange Mount FDmesh Power MOSFET - TO-247
***r Electronics
Power Field-Effect Transistor, 35A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N CH, 600V, 35A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:255W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
***ure Electronics
N-Channel 600 V 88 mOhm Flange Mount FDmesh™ II Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 35A Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Power Field-Effect Transistor, 35A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ure Electronics
Single N-Channel 600 V 99 mOhm 70 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 37.9A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***ure Electronics
Single N-Channel 600 V 60 mOhm 68 nC CoolMOS™ Power Mosfet - TO-247-3
***nell
MOSFET, N-CH, 600V, 35A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Po
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFH30N60P
DISTI # V36:1790_15877447		IXYS CorporationTrans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247
RoHS: Compliant		0
    IXFH30N60P
    DISTI # IXFH30N60P-ND    		IXYS CorporationMOSFET N-CH 600V 30A TO-247
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Temporarily Out of Stock
    • 30:$6.0067
    IXFH30N60P
    DISTI # 747-IXFH30N60P    		IXYS CorporationMOSFET 600V 30A
    RoHS: Compliant    		223
    • 1:$9.4200
    • 10:$8.4200
    • 25:$7.3300
    • 50:$7.1800
    • 100:$6.9100
    • 250:$5.9000
    • 500:$5.5900
    • 1000:$4.7200
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    Disponibilidad
    Valores:
    203
    En orden:
    2186
    Ingrese la cantidad:
    El precio actual de IXFH30N60P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    9,42 US$
    9,42 US$
    10
    8,42 US$
    84,20 US$
    25
    7,33 US$
    183,25 US$
    50
    7,18 US$
    359,00 US$
    100
    6,91 US$
    691,00 US$
    250
    5,90 US$
    1 475,00 US$
    500
    5,59 US$
    2 795,00 US$
    1000
    4,72 US$
    4 720,00 US$
    2500
    4,04 US$
    10 100,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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