OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPB65R190C6

IPB65R190C6
Mfr. #:
IPB65R190C6
Fabricante:
Infineon Technologies
Descripción:
Darlington Transistors MOSFET N-Ch 700V 20.2A D2PAK-2 CoolMOS C6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB65R190C6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
CoolMOS C6
embalaje
Carrete
Alias ​​de parte
IPB65R190C6ATMA1 IPB65R190C6XT SP000863890
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
CoolMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
151 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
20.2 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Resistencia a la fuente de desagüe de Rds
190 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
133 nS
Qg-Gate-Charge
73 nC
Tags
IPB65R190C6, IPB65R19, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 20.2A 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO263-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ure Electronics
E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
*** Electronics
MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
***icroelectronics
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package
***sible Micro
(CP22-1029) Transistor 650V N-Channel Mosfet D2PAK STB20N65M5
***ure Electronics
N-Channel 710 V 190 mO 36 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
Single N-Channel 550 V 199 mOhm 45 nC CoolMOS™ Power Mosfet - TO-263-3
***ical
Trans MOSFET N-CH 550V 17A 3-Pin(2+Tab) D2PAK T/R
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ment14 APAC
MOSFET, N-CH, 550V, 17A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:139W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ical
Trans MOSFET N-CH 500V 19A 3-Pin(2+Tab) D2PAK
*** Electronics
VISHAY SIHB20N50E-GE3 MOSFET, N CHANNEL, 500V, 19A, TO-263-3
***ure Electronics
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
***S
French Electronic Distributor since 1988
***nell
MOSFET, N CHANNEL, 500V, 19A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 179W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited
***ure Electronics
E Series N Channel 600 V 0.158 O 95 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 600V, 23A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.132ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Pow
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
***ure Electronics
N-Channel 600 V 22 A 0.15 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Parte # Mfg. Descripción Valores Precio
IPB65R190C6ATMA1
DISTI # 30704142		Infineon Technologies AGTrans MOSFET N-CH 700V 20.2A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		10000
  • 6000:$1.3368
  • 4000:$1.3903
  • 2000:$1.4284
  • 1000:$1.6042
IPB65R190C6ATMA1
DISTI # IPB65R190C6ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 20.2A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB65R190C6ATMA1
    DISTI # IPB65R190C6ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 20.2A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB65R190C6ATMA1
      DISTI # IPB65R190C6ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 650V 20.2A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB65R190C6ATMA1
        DISTI # C1S322000264777        		Infineon Technologies AGTrans MOSFET N-CH 700V 20.2A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant        		10000
        • 1000:$1.7300
        IPB65R190C6
        DISTI # 726-IPB65R190C6        		Infineon Technologies AGMOSFET N-Ch 700V 20.2A D2PAK-2 CoolMOS C6
        RoHS: Compliant        		0
        • 1:$3.0300
        • 10:$2.5700
        • 100:$2.2300
        • 250:$2.1200
        • 500:$1.9000
        • 1000:$1.6000
        IPB65R190C6ATMA1
        DISTI # N/A        		Infineon Technologies AGMOSFET HIGH POWER_LEGACY0
          Imagen Parte # Descripción
          IPB65R660CFDA

          Mfr.#: IPB65R660CFDA

          OMO.#: OMO-IPB65R660CFDA

          		 MOSFET N-Ch 650V 6A D2PAK-2
          IPB65R660CFDAATMA1

          Mfr.#: IPB65R660CFDAATMA1

          OMO.#: OMO-IPB65R660CFDAATMA1

          		 MOSFET N-Ch 650V 6A D2PAK-2
          IPB65R310CFDATMA2

          Mfr.#: IPB65R310CFDATMA2

          OMO.#: OMO-IPB65R310CFDATMA2-INFINEON-TECHNOLOGIES

          		 LOW POWER_LEGACY
          IPB65R660CFDAXT

          Mfr.#: IPB65R660CFDAXT

          OMO.#: OMO-IPB65R660CFDAXT-1190

          		 Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB65R660CFDAATMA1)
          IPB65R110CFDA 65F6110A

          Mfr.#: IPB65R110CFDA 65F6110A

          OMO.#: OMO-IPB65R110CFDA-65F6110A-1190

          		 Nuevo y original
          IPB65R150CFDA

          Mfr.#: IPB65R150CFDA

          OMO.#: OMO-IPB65R150CFDA-1190

          		 Nuevo y original
          IPB65R190C6 65C6190

          Mfr.#: IPB65R190C6 65C6190

          OMO.#: OMO-IPB65R190C6-65C6190-1190

          		 Nuevo y original
          IPB65R190C7 65C7190

          Mfr.#: IPB65R190C7 65C7190

          OMO.#: OMO-IPB65R190C7-65C7190-1190

          		 Nuevo y original
          IPB65R420CFDA

          Mfr.#: IPB65R420CFDA

          OMO.#: OMO-IPB65R420CFDA-1190

          		 Nuevo y original
          IPB65R660CFDATMA1

          Mfr.#: IPB65R660CFDATMA1

          OMO.#: OMO-IPB65R660CFDATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 650V 6A TO263
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de IPB65R190C6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          2,40 US$
          2,40 US$
          10
          2,28 US$
          22,80 US$
          100
          2,16 US$
          216,00 US$
          500
          2,04 US$
          1 020,00 US$
          1000
          1,92 US$
          1 920,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
          Empezar con
          Top