CEDM8001VL TR

CEDM8001VL TR
Mfr. #:
CEDM8001VL TR
Fabricante:
Central Semiconductor
Descripción:
MOSFET 20V P-Ch Enh FET 10Vgs 100mA 100mW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CEDM8001VL TR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CEDM8001VL TR más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor central
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-883VL
Embalaje:
Carrete
Serie:
CEDM8001VL
Marca:
Semiconductor central
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
8000
Subcategoría:
MOSFET
Parte # Alias:
CEDM8001VL PBFREE TR
Unidad de peso:
0.000022 oz
Tags
CEDM8001, CEDM8, CEDM, CED
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Imagen Parte # Descripción
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Mfr.#: PMZ600UNEYL

OMO.#: OMO-PMZ600UNEYL

MOSFET Trench Mosfet 20V, N-channel
RB522ES-30T15R

Mfr.#: RB522ES-30T15R

OMO.#: OMO-RB522ES-30T15R

Schottky Diodes & Rectifiers SBD 30V Vrm 100mA Id SMD0603
CEDM7001 TR

Mfr.#: CEDM7001 TR

OMO.#: OMO-CEDM7001-TR

MOSFET N-Channel MOSFET 20V 100mA
AS4C256M16D3B-12BCN

Mfr.#: AS4C256M16D3B-12BCN

OMO.#: OMO-AS4C256M16D3B-12BCN

DRAM 4G 1.5V 800MHz 256M x 16 DDR3
GRM153R60J475ME15D

Mfr.#: GRM153R60J475ME15D

OMO.#: OMO-GRM153R60J475ME15D

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 4.7uF 6.3volts *Derate Voltage/Temp
AS4C256M16D3B-12BCN

Mfr.#: AS4C256M16D3B-12BCN

OMO.#: OMO-AS4C256M16D3B-12BCN-ALLIANCE-MEMORY

IC DRAM 4G PARALLEL 96FBGA
PMZ600UNEYL

Mfr.#: PMZ600UNEYL

OMO.#: OMO-PMZ600UNEYL-NEXPERIA

MOSFET N-CH 20V 0.6A
CEDM7001 TR

Mfr.#: CEDM7001 TR

OMO.#: OMO-CEDM7001-TR-CENTRAL-SEMICONDUCTOR

MOSFET N-CH 20V 0.1A SOT-883
RB522ES-30T15R

Mfr.#: RB522ES-30T15R

OMO.#: OMO-RB522ES-30T15R-ROHM-SEMI

SCHOTTKY BARRIER DIODE ULTRA SMA
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de CEDM8001VL TR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,38 US$
0,38 US$
10
0,28 US$
2,76 US$
100
0,16 US$
15,90 US$
1000
0,12 US$
116,00 US$
2500
0,10 US$
250,00 US$
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