STGPL6NC60DI

STGPL6NC60DI
Mfr. #:
STGPL6NC60DI
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors 600 V - 6 A Hyper fast IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGPL6NC60DI Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGPL6NC60DI más información STGPL6NC60DI Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.9 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
14 A
Pd - Disipación de energía:
56 W
Serie:
STGPL6NC60DI
Embalaje:
Tubo
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1000
Subcategoría:
IGBT
Unidad de peso:
0.081130 oz
Tags
STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***nell
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IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***ment14 APAC
IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
*** Source Electronics
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***nell
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***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted
***ineon
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***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W;
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***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest Vce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in Vce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V for flexibility of design; High device reliability | Target Applications: UPS; Solar; Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Parte # Mfg. Descripción Valores Precio
STGPL6NC60DI
DISTI # 497-10072-5-ND
STMicroelectronicsIGBT 600V 14A 56W TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$0.8633
STGPL6NC60DI
DISTI # STGPL6NC60DI
STMicroelectronicsTrans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGPL6NC60DI)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.8499
  • 2000:$0.8099
  • 4000:$0.7729
  • 6000:$0.7389
  • 10000:$0.7239
STGPL6NC60DI
DISTI # STGPL6NC60DI
STMicroelectronicsTrans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220 Tube (Alt: STGPL6NC60DI)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
    STGPL6NC60DI
    DISTI # 511-STGPL6NC60DI
    STMicroelectronicsIGBT Transistors 600 V - 6 A Hyper fast IGBT
    RoHS: Compliant
    0
    • 1:$1.6700
    • 10:$1.4200
    • 100:$1.1400
    • 500:$0.9930
    • 1000:$0.8230
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    OMO.#: OMO-STGF10NC60KD-STMICROELECTRONICS

    IGBT 600V 9A 25W TO220FP
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    Mfr.#: STF11N60DM2

    OMO.#: OMO-STF11N60DM2-STMICROELECTRONICS

    N-CHANNEL 600 V, 0.26 OHM TYP.,
    Disponibilidad
    Valores:
    996
    En orden:
    2979
    Ingrese la cantidad:
    El precio actual de STGPL6NC60DI es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,66 US$
    1,66 US$
    10
    1,41 US$
    14,10 US$
    100
    1,13 US$
    113,00 US$
    500
    0,99 US$
    496,50 US$
    1000
    0,82 US$
    823,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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