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STGW80H65DFB

STGW80H65DFB
Mfr. #:
STGW80H65DFB
Fabricante:
STMicroelectronics
Descripción:
IGBT 650V 120A 469W TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW80H65DFB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGW80H65DFB más información STGW80H65DFB Product Details
Atributo del producto
Valor de atributo
Fabricante
STMicroelectronics
categoria de producto
IGBTs - Single
Serie
600-650V IGBTs
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247
Configuración
Único
Potencia máxima
469W
Tiempo de recuperación inverso trr
85ns
Colector-corriente-Ic-Max
120A
Voltaje-Colector-Emisor-Ruptura-Máx.
650V
Tipo IGBT
Parada de campo de trinchera
Colector de corriente pulsado Icm
240A
Vce-en-Max-Vge-Ic
2V @ 15V, 80A
Energía de conmutación
2.1mJ (on), 1.5mJ (off)
Gate-Charge
414nC
Td-encendido-apagado-25 ° C
84ns/280ns
Condición de prueba
400V, 80A, 10 Ohm, 15V
Disipación de potencia Pd
469 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
650 V
Colector-Emisor-Saturación-Voltaje
1.6 V
Corriente-de-colector-continuo-a-25-C
120 A
Puerta-Emisor-Fuga-Corriente
250 nA
Voltaje máximo del emisor de puerta
20 V
Colector-continuo-Corriente-Ic-Max
80 A
Tags
STGW80H, STGW80, STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247
***ure Electronics
HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 650V 80A High-Speed TO247
***i-Key
IGBT 650V 120A 469W TO-247
***ark
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT SINGOLO 650V 120A TO-247; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:469W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Parte # Mfg. Descripción Valores Precio
STGW80H65DFB
DISTI # V36:1790_06560788		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    STGW80H65DFB
    DISTI # 497-14368-ND    		STMicroelectronicsIGBT 650V 120A 469W TO-247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 1020:$4.8225
    • 510:$5.4525
    • 120:$6.1770
    • 30:$7.0277
    • 1:$8.0700
    STGW80H65DFB-4
    DISTI # STGW80H65DFB-4-ND    		STMicroelectronicsIGBT BIPO 650V 80A TO247
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Temporarily Out of Stock
    • 600:$9.9325
    STGW80H65DFB
    DISTI # STGW80H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube (Alt: STGW80H65DFB)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€4.7900
    • 10:€4.3900
    • 25:€4.1900
    • 50:€3.9900
    • 100:€3.8900
    • 500:€3.6900
    • 1000:€3.4900
    STGW80H65DFB
    DISTI # STGW80H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 600:$4.3900
    • 1200:$4.1900
    • 2400:$3.9900
    • 3600:$3.8900
    • 6000:$3.7900
    STGW80H65DFB
    DISTI # STGW80H65DFB-4    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB-4)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 600:$8.5900
    • 1200:$8.1900
    • 2400:$7.8900
    • 3600:$7.4900
    • 6000:$7.3900
    STGW80H65DFB
    DISTI # 45AC7608    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7608)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 1:$7.1400
    • 10:$6.4600
    • 25:$6.1600
    • 50:$5.7500
    • 100:$5.3400
    • 250:$5.1100
    • 500:$4.6500
    STGW80H65DFB-4
    DISTI # STGW80H65DFB-4    		STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 4-Pin TO-247 Tube (Alt: STGW80H65DFB-4)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€8.7900
    • 10:€8.0900
    • 25:€7.6900
    • 50:€7.3900
    • 100:€7.1900
    • 500:€6.8900
    • 1000:€6.3900
    STGW80H65DFB
    DISTI # 45AC7608    		STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
    • 500:$4.7000
    • 250:$5.1500
    • 100:$5.3900
    • 50:$5.8000
    • 25:$6.2100
    • 10:$6.5100
    • 1:$7.2000
    STGW80H65DFB-4
    DISTI # 26Y5820    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$7.2500
    STGW80H65DFB
    DISTI # 511-STGW80H65DFB    		STMicroelectronicsIGBT Transistors Trench gte FieldStop IGBT 650V 80A
    RoHS: Compliant    		0
    • 1:$7.1300
    • 10:$6.4500
    • 25:$6.1500
    • 100:$5.3400
    • 250:$5.1000
    • 500:$4.6500
    • 1000:$4.0500
    STGW80H65DFB-4
    DISTI # 511-STGW80H65DFB-4    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed0
    • 1:$12.1700
    • 10:$11.1900
    • 25:$10.7300
    • 100:$9.4500
    • 250:$8.9900
    • 500:$8.4100
    • 1000:$7.7100
    STGW80H65DFBACTIVE COMPNTS/DIODES 25
      STGW80H65DFB
      DISTI # 7925814P      		STMicroelectronicsIGBT N-CH 650V 80A HIGH-SPEED TO247, TU384
      • 20:£4.5800
      • 10:£4.6700
      STGW80H65DFB
      DISTI # 2807180      		STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247
      RoHS: Compliant      		472
      • 1020:$6.3200
      • 510:$7.2600
      • 120:$8.3300
      • 30:$9.5900
      • 1:$11.1400
      STGW80H65DFB
      DISTI # 2807180      		STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-247
      RoHS: Compliant      		472
      • 100:£4.2300
      • 50:£4.5600
      • 10:£4.8800
      • 5:£5.6600
      • 1:£6.2000
      Imagen Parte # Descripción
      STGW80V60DF

      Mfr.#: STGW80V60DF

      OMO.#: OMO-STGW80V60DF

      		 IGBT Transistors Trench gate V series 600V 80A HiSpd
      STGW80H65FB

      Mfr.#: STGW80H65FB

      OMO.#: OMO-STGW80H65FB

      		 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
      STGW80H65DFB

      Mfr.#: STGW80H65DFB

      OMO.#: OMO-STGW80H65DFB

      		 IGBT Transistors Trench gte FieldStop IGBT 650V 80A
      STGW80H65FB-4

      Mfr.#: STGW80H65FB-4

      OMO.#: OMO-STGW80H65FB-4

      		 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
      STGW80H65DFB-4

      Mfr.#: STGW80H65DFB-4

      OMO.#: OMO-STGW80H65DFB-4-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGW80H65FB-4

      Mfr.#: STGW80H65FB-4

      OMO.#: OMO-STGW80H65FB-4-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGW80H65FB

      Mfr.#: STGW80H65FB

      OMO.#: OMO-STGW80H65FB-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGW80V60F

      Mfr.#: STGW80V60F

      OMO.#: OMO-STGW80V60F-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGW80V60DF

      Mfr.#: STGW80V60DF

      OMO.#: OMO-STGW80V60DF-STMICROELECTRONICS

      		 IGBT 600V 120A 469W TO247
      STGW80H65DFB

      Mfr.#: STGW80H65DFB

      OMO.#: OMO-STGW80H65DFB-STMICROELECTRONICS

      		 IGBT 650V 120A 469W TO-247
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de STGW80H65DFB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      5,68 US$
      5,68 US$
      10
      5,40 US$
      54,01 US$
      100
      5,12 US$
      511,65 US$
      500
      4,83 US$
      2 416,15 US$
      1000
      4,55 US$
      4 548,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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