IKQ40N120CH3XKSA1

IKQ40N120CH3XKSA1
Mfr. #:
IKQ40N120CH3XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors IGBT PRODUCTS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKQ40N120CH3XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO247-3-46
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
500 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
80 A
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Parte # Alias:
IKQ40N120CH3 SP001272706
Unidad de peso:
0.211644 oz
Tags
IKQ4, IKQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKQ40N120CH3XKSA1 P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247
***et Europe
High speed switching series third generation IGBT
***i-Key
IGBT HS SW 1200V 40A TO-247-3
***ark
Igbt, 1.2Kv, 80A, 500W, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 1.2KV, 80A, 500W, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, 1.2KV, 80A, 500W, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):2V; Dissipazione di Potenza Pd:500W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
Parte # Mfg. Descripción Valores Precio
IKQ40N120CH3XKSA1
DISTI # IKQ40N120CH3XKSA1-ND
Infineon Technologies AGIGBT HS SW 1200V 40A TO-247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
191In Stock
  • 720:$6.3015
  • 240:$7.2366
  • 25:$8.3344
  • 10:$8.7410
  • 1:$9.6800
IKQ40N120CH3XKSA1
DISTI # IKQ40N120CH3XKSA1
Infineon Technologies AGHigh speed switching series third generation IGBT - Rail/Tube (Alt: IKQ40N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$4.8900
  • 1440:$4.9900
  • 960:$5.0900
  • 480:$5.2900
  • 240:$5.4900
IKQ40N120CH3XKSA1
DISTI # SP001272706
Infineon Technologies AGHigh speed switching series third generation IGBT (Alt: SP001272706)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€3.9900
  • 500:€4.2900
  • 100:€4.4900
  • 50:€4.5900
  • 25:€4.7900
  • 10:€4.9900
  • 1:€5.4900
IKQ40N120CH3XKSA1
DISTI # 93AC7069
Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes170
  • 500:$6.0600
  • 250:$6.6500
  • 100:$6.9600
  • 50:$7.4800
  • 25:$8.0100
  • 10:$8.4000
  • 1:$9.3000
IKQ40N120CH3XKSA1
DISTI # 726-IKQ40N120CH3XKSA
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
968
  • 1:$9.2100
  • 10:$8.3200
  • 25:$7.9300
  • 100:$6.8900
  • 250:$6.5800
  • 500:$6.0000
IKQ40N120CH3XKSA1
DISTI # 1623286
Infineon Technologies AGIGBT 1200V 40A HIGHSPEED3 DIODE TO-247, TU106
  • 600:£4.0310
  • 300:£4.3190
  • 150:£4.6510
  • 30:£5.0390
IKQ40N120CH3XKSA1
DISTI # 2986434
Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247240
  • 100:£5.0000
  • 50:£5.3800
  • 10:£5.7500
  • 5:£6.6700
  • 1:£7.2000
IKQ40N120CH3XKSA1
DISTI # 2986434
Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247
RoHS: Compliant
170
  • 100:$7.3000
  • 250:$7.3000
  • 50:$8.8600
  • 10:$9.0300
  • 5:$9.7300
  • 1:$10.8000
Imagen Parte # Descripción
IKW40N120CS6XKSA1

Mfr.#: IKW40N120CS6XKSA1

OMO.#: OMO-IKW40N120CS6XKSA1

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FGH40T120SQDNL4

Mfr.#: FGH40T120SQDNL4

OMO.#: OMO-FGH40T120SQDNL4

IGBT Transistors IGBT 1200V 40A UFS
IKY40N120CS6XKSA1

Mfr.#: IKY40N120CS6XKSA1

OMO.#: OMO-IKY40N120CS6XKSA1

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IKQ75N120CH3XKSA1

Mfr.#: IKQ75N120CH3XKSA1

OMO.#: OMO-IKQ75N120CH3XKSA1

IGBT Transistors IGBT PRODUCTS
NGTB40N120FL3WG

Mfr.#: NGTB40N120FL3WG

OMO.#: OMO-NGTB40N120FL3WG

IGBT Transistors IGBT 1200V 40A FS3 SOLAR/
NGTB40N120S3WG

Mfr.#: NGTB40N120S3WG

OMO.#: OMO-NGTB40N120S3WG

IGBT Transistors IGBT 1200V 40A FS3 LOW VF
IKQ40N120CT2XKSA1

Mfr.#: IKQ40N120CT2XKSA1

OMO.#: OMO-IKQ40N120CT2XKSA1

IGBT Transistors IGBT PRODUCTS
IKY40N120CH3XKSA1

Mfr.#: IKY40N120CH3XKSA1

OMO.#: OMO-IKY40N120CH3XKSA1

IGBT Transistors
IKW40N120H3

Mfr.#: IKW40N120H3

OMO.#: OMO-IKW40N120H3

IGBT Transistors IGBT PRODUCTS
IKW40N120T2

Mfr.#: IKW40N120T2

OMO.#: OMO-IKW40N120T2

IGBT Transistors LOW LOSS DuoPack 1200V 40A
Disponibilidad
Valores:
968
En orden:
2951
Ingrese la cantidad:
El precio actual de IKQ40N120CH3XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,21 US$
9,21 US$
10
8,32 US$
83,20 US$
25
7,93 US$
198,25 US$
100
6,89 US$
689,00 US$
250
6,58 US$
1 645,00 US$
500
6,00 US$
3 000,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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