GS8161E32DGT-333

GS8161E32DGT-333
Mfr. #:
GS8161E32DGT-333
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 512K x 32 16M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161E32DGT-333 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161E32DGT-333 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
512 k x 32
Tiempo de acceso:
4.5 ns
Frecuencia máxima de reloj:
333 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
260 mA, 315 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TQFP-100
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161E32DGT
Escribe:
Tubería DCD / Flujo continuo
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
36
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
NBT SRAM
Tags
GS8161E32DGT-33, GS8161E32DGT-3, GS8161E32DGT, GS8161E32DG, GS8161E32, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Imagen Parte # Descripción
GS8161E32DGD-250V

Mfr.#: GS8161E32DGD-250V

OMO.#: OMO-GS8161E32DGD-250V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGD-250

Mfr.#: GS8161E32DGD-250

OMO.#: OMO-GS8161E32DGD-250

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-150V

Mfr.#: GS8161E32DGT-150V

OMO.#: OMO-GS8161E32DGT-150V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGT-150

Mfr.#: GS8161E32DGT-150

OMO.#: OMO-GS8161E32DGT-150

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-200

Mfr.#: GS8161E32DGT-200

OMO.#: OMO-GS8161E32DGT-200

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-150I

Mfr.#: GS8161E32DGT-150I

OMO.#: OMO-GS8161E32DGT-150I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DGT-333

Mfr.#: GS8161E36DGT-333

OMO.#: OMO-GS8161E36DGT-333

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DGT-150IV

Mfr.#: GS8161E32DGT-150IV

OMO.#: OMO-GS8161E32DGT-150IV

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DD-200IV

Mfr.#: GS8161E36DD-200IV

OMO.#: OMO-GS8161E36DD-200IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGT-400

Mfr.#: GS8161E32DGT-400

OMO.#: OMO-GS8161E32DGT-400

SRAM 2.5 or 3.3V 512K x 32 16M
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de GS8161E32DGT-333 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
20,08 US$
20,08 US$
25
18,64 US$
466,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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