GS8161E32DGD-250V

GS8161E32DGD-250V
Mfr. #:
GS8161E32DGD-250V
Fabricante:
GSI Technology
Descripción:
SRAM 1.8/2.5V 512K x 32 16M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161E32DGD-250V Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161E32DGD-250V más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
512 k x 32
Tiempo de acceso:
5.5 ns
Frecuencia máxima de reloj:
250 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
2.7 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
225 mA, 245 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161E32DGD
Escribe:
Tubería DCD / Flujo continuo
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
18
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS8161E32DGD-25, GS8161E32DGD-2, GS8161E32DGD, GS8161E32DG, GS8161E32, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 32 5.5ns/3ns 165-Pin FBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS8161E32DD-150IV

Mfr.#: GS8161E32DD-150IV

OMO.#: OMO-GS8161E32DD-150IV

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DD-333V

Mfr.#: GS8161E36DD-333V

OMO.#: OMO-GS8161E36DD-333V

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGT-150V

Mfr.#: GS8161E32DGT-150V

OMO.#: OMO-GS8161E32DGT-150V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGT-200I

Mfr.#: GS8161E32DGT-200I

OMO.#: OMO-GS8161E32DGT-200I

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DD-333

Mfr.#: GS8161E32DD-333

OMO.#: OMO-GS8161E32DD-333

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-250V

Mfr.#: GS8161E32DGT-250V

OMO.#: OMO-GS8161E32DGT-250V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGD-150V

Mfr.#: GS8161E32DGD-150V

OMO.#: OMO-GS8161E32DGD-150V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E36DD-333I

Mfr.#: GS8161E36DD-333I

OMO.#: OMO-GS8161E36DD-333I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E36DGT-200IV

Mfr.#: GS8161E36DGT-200IV

OMO.#: OMO-GS8161E36DGT-200IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E36DD-150I

Mfr.#: GS8161E36DD-150I

OMO.#: OMO-GS8161E36DD-150I

SRAM 2.5 or 3.3V 512K x 36 18M
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de GS8161E32DGD-250V es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
24,46 US$
24,46 US$
25
22,71 US$
567,75 US$
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