OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

MRFE6VP6300HSR5

MRFE6VP6300HSR5
Mfr. #:
MRFE6VP6300HSR5
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors VHV6 300W50VISM NI780S-4
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRFE6VP6300HSR5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MRFE6VP6300HSR5 más información
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Vds - Voltaje de ruptura de drenaje-fuente:
130 V
Ganar:
26.6 dB
Potencia de salida:
300 W
Temperatura mínima de funcionamiento:
- 30 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-780S-4
Embalaje:
Carrete
Configuración:
Único
Frecuencia de operación:
1.8 MHz to 600 MHz
Serie:
MRFE6VP6300
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Pd - Disipación de energía:
1.05 kW
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
10 V
Vgs th - Voltaje umbral puerta-fuente:
2.2 V
Parte # Alias:
935314385178
Unidad de peso:
0.161213 oz
Tags
MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1826
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
***et
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 1.8-600 MHZ, 30
***ical
Trans RF MOSFET N-CH 130V 5-Pin NI-780S T/R
***et Europe
Trans MOSFET N-CH 130V 4-Pin NI-780S T/R
***hardson RFPD
RF POWER TRANSISTOR LDMOS
***i-Key
FET RF 2CH 130V 230MHZ NI780S-4
***ark
RF POWER FET, N CH, 125V, NI-780S-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; Gain:26.5dB ;RoHS Compliant: Yes
MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
Parte # Mfg. Descripción Valores Precio
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5-ND		NXP SemiconductorsFET RF 2CH 130V 230MHZ NI780S-4
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$95.5168
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		Avnet, Inc.Trans MOSFET N-CH 130V 4-Pin NI-780S T/R - Tape and Reel (Alt: MRFE6VP6300HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$97.2900
  • 100:$93.4900
  • 200:$89.7900
  • 300:$86.5900
  • 500:$84.8900
MRFE6VP6300HSR5
DISTI # 13T4415		NXP SemiconductorsRF POWER FET, N CHANNEL, 125V, NI-780S-4,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:300W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-780S,MSL:- RoHS Compliant: Yes0
  • 1:$111.5100
  • 10:$105.5200
  • 25:$100.1400
  • 50:$96.8000
  • 100:$88.8200
  • 250:$86.1900
  • 500:$83.4900
MRFE6VP6300HSR5
DISTI # 841-MRFE6VP6300HSR5		NXP SemiconductorsRF MOSFET Transistors VHV6 300W50VISM NI780S-4
RoHS: Compliant		0
  • 50:$95.5200
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		25
  • 1:$111.6900
  • 10:$103.2200
  • 25:$100.1900
Imagen Parte # Descripción
MRFE6VP5150GNR1

Mfr.#: MRFE6VP5150GNR1

OMO.#: OMO-MRFE6VP5150GNR1

 RF MOSFET Transistors 1.8--600 MHz 150 W CW 50 V
MRFE6VP100HSR5

Mfr.#: MRFE6VP100HSR5

OMO.#: OMO-MRFE6VP100HSR5

 RF MOSFET Transistors VHV6 100W 50V ISM
MRFE6VP6300HSR3

Mfr.#: MRFE6VP6300HSR3

OMO.#: OMO-MRFE6VP6300HSR3

 RF MOSFET Transistors VHV6 300W50VISM NI780S-4
MRFE6VP61K25HSR6

Mfr.#: MRFE6VP61K25HSR6

OMO.#: OMO-MRFE6VP61K25HSR6-NXP-SEMICONDUCTORS

 FET RF 2CH 133V 230MHZ NI-1230S
MRFE6VP5600HR

Mfr.#: MRFE6VP5600HR

OMO.#: OMO-MRFE6VP5600HR-1190

 Nuevo y original
MRFE6VP61K25H

Mfr.#: MRFE6VP61K25H

OMO.#: OMO-MRFE6VP61K25H-1190

 Nuevo y original
MRFE6VP5150GNR1

Mfr.#: MRFE6VP5150GNR1

OMO.#: OMO-MRFE6VP5150GNR1-NXP-SEMICONDUCTORS

 FET RF 2CH 133V 230MHZ TO-270 GW
MRFE6VP8600HSR5

Mfr.#: MRFE6VP8600HSR5

OMO.#: OMO-MRFE6VP8600HSR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 600W NI1230S 50V
MRFE6VP61K25HR5

Mfr.#: MRFE6VP61K25HR5

OMO.#: OMO-MRFE6VP61K25HR5-NXP-SEMICONDUCTORS

 FET RF 2CH 133V 230MHZ NI-1230
MRFE6VP6300HR5

Mfr.#: MRFE6VP6300HR5

OMO.#: OMO-MRFE6VP6300HR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 300W50VISM NI780H-4
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de MRFE6VP6300HSR5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Empezar con
Nuevos productos
  • PF3001: 10-Channel Configurable PMIC
    PF3001: 10-Channel Configurable PMIC
    NXP Semiconductors' PF3001 power management IC (PMIC) powers the core processor, external memory and peripherals to provide a single-chip system power solution.
  • Single-Coil Wireless Reference Design
    Single-Coil Wireless Reference Design
    Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology
  • A1006 Secure Authentication ICs
    A1006 Secure Authentication ICs
    NXP's A1006 secure authentication ICs have small form factor and simple system integration.
  • Compare MRFE6VP6300HSR5
    Compare MRFE6VP6300HSR5
    MRFE6VP6300HR vs MRFE6VP6300HR3 vs MRFE6VP6300HR5
  • GreenChip™ Solutions
    GreenChip™ Solutions
    NXP’s innovative GreenChip Solutions is aimed at enabling smarter, more compact, and extremely energy efficient power solutions.
  • QorIQ P2 Platform
    QorIQ P2 Platform
    QorIQ P2 Platform delivers dual- and single-core frequencies up to 1.2GHz on a 45nm technology low-power platform.
More Newest Products
Top