BSD314SPEH6327XTSA1

BSD314SPEH6327XTSA1
Mfr. #:
BSD314SPEH6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors MOSFET P-Ch 30V -1.5A SOT-363-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSD314SPEH6327XTSA1 Ficha de datos
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Más información:
BSD314SPEH6327XTSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
BSD314
embalaje
Carrete
Alias ​​de parte
BSD314SPE BSD314SPEH6327XT H6327 SP000917658
Unidad de peso
0.000265 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOT-363-6
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
500 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
2.8 ns
Hora de levantarse
3.9 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
- 1.5 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 2 V
Resistencia a la fuente de desagüe de Rds
230 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
12.4 ns
Tiempo de retardo de encendido típico
5.1 ns
Qg-Gate-Charge
- 0.7 nC
Transconductancia directa-Mín.
3 S
Modo de canal
Mejora
Tags
BSD314SPEH, BSD314, BSD31, BSD3, BSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 30V 1.5A Automotive 6-Pin SOT-363 T/R
***ark
Mosfet, P-Ch, Aec-Q101, 30V, -1.5A; Transistor Polarity:p Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.107Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
Parte # Mfg. Descripción Valores Precio
BSD314SPEH6327XTSA1
DISTI # BSD314SPEH6327XTSA1-ND
Infineon Technologies AGMOSFET P-CH 30V 1.5A SOT363
RoHS: Compliant
Min Qty: 9000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 9000:$0.1023
BSD314SPEH6327XTSA1
DISTI # BSD314SPEH6327XTSA1
Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD314SPEH6327XTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel
Americas - 0
  • 9000:$0.0689
  • 15000:$0.0659
  • 24000:$0.0639
  • 45000:$0.0619
  • 90000:$0.0599
BSD314SPEH6327XTSA1
DISTI # BSD314SPEH6327XTSA1
Infineon Technologies AG- Tape and Reel (Alt: BSD314SPEH6327XTSA1)
RoHS: Compliant
Container: Reel
Americas - 0
    BSD314SPEH6327XTSA1
    DISTI # SP000917658
    Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R (Alt: SP000917658)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.1019
    • 6000:€0.0789
    • 12000:€0.0639
    • 18000:€0.0539
    • 30000:€0.0509
    BSD314SPEH6327XTSA1
    DISTI # 49AC0107
    Infineon Technologies AGMOSFET, P-CH, AEC-Q101, 30V, -1.5A,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.107ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes8698
    • 1000:$0.1080
    • 500:$0.1200
    • 250:$0.1320
    • 100:$0.1440
    • 50:$0.1850
    • 25:$0.2250
    • 10:$0.2660
    • 1:$0.3500
    BSD314SPEH6327XTSA1
    DISTI # 726-BSD314SPEH6327XT
    Infineon Technologies AGMOSFET P-Ch 30V -1.5A SOT-363-3
    RoHS: Compliant
    1392
    • 1:$0.3400
    • 10:$0.2660
    • 100:$0.1440
    • 1000:$0.1080
    • 3000:$0.0930
    • 9000:$0.0870
    BSD314SPEH6327XTSA1
    DISTI # 2839432
    Infineon Technologies AGMOSFET, P-CH, AEC-Q101, 30V, -1.5A
    RoHS: Compliant
    8718
    • 100:£0.1400
    • 25:£0.2000
    • 5:£0.2590
    BSD314SPEH6327XTSA1
    DISTI # 2839432
    Infineon Technologies AGMOSFET, P-CH, AEC-Q101, 30V, -1.5A
    RoHS: Compliant
    8698
    • 100:$0.2790
    • 25:$0.4360
    • 5:$0.5810
    Imagen Parte # Descripción
    BSD314SPEH6327XTSA1

    Mfr.#: BSD314SPEH6327XTSA1

    OMO.#: OMO-BSD314SPEH6327XTSA1

    MOSFET P-Ch 30V -1.5A SOT-363-3
    BSD314SPEL6327XT

    Mfr.#: BSD314SPEL6327XT

    OMO.#: OMO-BSD314SPEL6327XT-1190

    Trans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD314SPEL6327HTSA1)
    BSD314SPE

    Mfr.#: BSD314SPE

    OMO.#: OMO-BSD314SPE-1190

    Nuevo y original
    BSD314SPE H6327

    Mfr.#: BSD314SPE H6327

    OMO.#: OMO-BSD314SPE-H6327-1190

    MOSFET, P-CH, AEC-Q101, 30V, -1.5A
    BSD314SPE6327

    Mfr.#: BSD314SPE6327

    OMO.#: OMO-BSD314SPE6327-1190

    Nuevo y original
    BSD314SPEH6327

    Mfr.#: BSD314SPEH6327

    OMO.#: OMO-BSD314SPEH6327-1190

    -30V,-1.5A,P-Ch Small-Signal MOSFET
    BSD314SPEH6327XT

    Mfr.#: BSD314SPEH6327XT

    OMO.#: OMO-BSD314SPEH6327XT-1190

    Nuevo y original
    BSD314SPEL6327

    Mfr.#: BSD314SPEL6327

    OMO.#: OMO-BSD314SPEL6327-1190

    Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    BSD314SPEL6327HTSA1

    Mfr.#: BSD314SPEL6327HTSA1

    OMO.#: OMO-BSD314SPEL6327HTSA1-INFINEON-TECHNOLOGIES

    MOSFET P-CH 30V 1.5A SOT363
    BSD314SPE L6327

    Mfr.#: BSD314SPE L6327

    OMO.#: OMO-BSD314SPE-L6327-126

    IGBT Transistors MOSFET P-Ch -30V -1.5A SOT-363-6
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de BSD314SPEH6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,09 US$
    0,09 US$
    10
    0,09 US$
    0,85 US$
    100
    0,08 US$
    8,09 US$
    500
    0,08 US$
    38,20 US$
    1000
    0,07 US$
    71,90 US$
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