PartNumber | BSD314SPEH6327XTSA1 | BSD314SPE H6327 | BSD314SPEH6327XT |
Description | MOSFET P-Ch 30V -1.5A SOT-363-3 | MOSFET, P-CH, AEC-Q101, 30V, -1.5A | |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | IC Chips | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-363-6 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | P-Channel | - | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 1.5 A | - | - |
Rds On Drain Source Resistance | 230 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | - 700 pC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 500 mW (1/2 W) | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | - | Reel |
Height | 0.9 mm | - | - |
Length | 2 mm | - | - |
Series | BSD314 | - | BSD314 |
Transistor Type | 1 P-Channel | - | 1 P-Channel |
Width | 1.25 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 3 S | - | - |
Fall Time | 2.8 ns | - | 2.8 ns |
Product Type | MOSFET | - | - |
Rise Time | 3.9 ns | - | 3.9 ns |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 12.4 ns | - | 12.4 ns |
Typical Turn On Delay Time | 5.1 ns | - | 5.1 ns |
Part # Aliases | BSD314SPE BSD314SPEH6327XT H6327 SP000917658 | - | - |
Unit Weight | 0.000265 oz | - | 0.000265 oz |
Part Aliases | - | - | BSD314SPE BSD314SPEH6327XT H6327 SP000917658 |
Package Case | - | - | SOT-363-6 |
Pd Power Dissipation | - | - | 500 mW |
Vgs Gate Source Voltage | - | - | +/- 20 V |
Id Continuous Drain Current | - | - | - 1.5 A |
Vds Drain Source Breakdown Voltage | - | - | - 30 V |
Vgs th Gate Source Threshold Voltage | - | - | - 2 V |
Rds On Drain Source Resistance | - | - | 230 mOhms |
Qg Gate Charge | - | - | - 0.7 nC |
Forward Transconductance Min | - | - | 3 S |