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DMN6013LFGQ-7

DMN6013LFGQ-7
Mfr. #:
DMN6013LFGQ-7
Fabricante:
Diodes Incorporated
Descripción:
MOSFET MOSFET BVDSS: 41V-60V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMN6013LFGQ-7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
DMN6013LFGQ-7 más información
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerDI3333-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
45 A
Rds On - Resistencia de la fuente de drenaje:
9.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
55.4 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
40 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Diodos incorporados
Otoño:
11.7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
9.9 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
27.6 ns
Tiempo típico de retardo de encendido:
6.2 ns
Tags
DMN6013, DMN601, DMN60, DMN6, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 10.3A Automotive 8-Pin PowerDI EP T/R
***et Europe
Trans MOSFET N-CH 60V 10.3A 8-Pin PowerDI T/R
***i-Key
MOSFET NCH 60V 10.3A POWERDI
***nell
MOSFET, AEC-Q101, N-CH, 45A, 60V; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0093ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V
***ark
Mosfet, Aec-Q101, N-Ch, 45A, 60V; Transistor Polarity:n Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0093Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 45A, 60V; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0093ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
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Disponibilidad
Valores:
928
En orden:
2911
Ingrese la cantidad:
El precio actual de DMN6013LFGQ-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,84 US$
0,84 US$
10
0,70 US$
6,98 US$
100
0,45 US$
45,00 US$
1000
0,36 US$
360,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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