DMN6013LFG-7 vs DMN6013LFG-13 vs DMN6013LFGQ-13

 
PartNumberDMN6013LFG-7DMN6013LFG-13DMN6013LFGQ-13
DescriptionMOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pFMOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pFMOSFET MOSFET BVDSS: 41V-60V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current10.3 A10.3 A-
Rds On Drain Source Resistance12.3 mOhms12.3 mOhms-
Vgs th Gate Source Threshold Voltage1.8 V1.8 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge26.6 nC26.6 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
SeriesDMN60DMN60-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time11.7 ns11.7 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time9.9 ns9.9 ns-
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time27.6 ns27.6 ns-
Typical Turn On Delay Time6.2 ns6.2 ns-
Unit Weight0.002540 oz0.002540 oz-
Qualification--AEC-Q101
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