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SIR624DP-T1-RE3

SIR624DP-T1-RE3
Mfr. #:
SIR624DP-T1-RE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR624DP-T1-RE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
18.6 A
Rds On - Resistencia de la fuente de drenaje:
60 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
30 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
52 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
26 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
18 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
16 ns
Tiempo típico de retardo de encendido:
9 ns
Tags
SIR62, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-Channel 200V 18.6A 8-Pin PowerPAK SOIC
***i-Key
N-CHANNEL 200-V (D-S) MOSFET
***ark
Mosfet, N-Ch, 200V, 18.6A, 150Deg C, 52W; Transistor Polarity:n Channel; Continuous Drain Current Id:18.6A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.05Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 18.6A, 150DEG C, 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:18.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:52W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:ThunderFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 200V, 18.6A, 150°C, 52W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18.6A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.05ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:52W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:ThunderFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Imagen Parte # Descripción
SIR624DP-T1-GE3

Mfr.#: SIR624DP-T1-GE3

OMO.#: OMO-SIR624DP-T1-GE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-RE3

Mfr.#: SIR624DP-T1-RE3

OMO.#: OMO-SIR624DP-T1-RE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-GE3

Mfr.#: SIR624DP-T1-GE3

OMO.#: OMO-SIR624DP-T1-GE3-VISHAY

 MOSFET N-CH 200V 18.6A SO-8
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SIR624DP-T1-RE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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