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SIR624DP-T1-GE3

SIR624DP-T1-GE3
Mfr. #:
SIR624DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR624DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR624DP-T1-GE3 DatasheetSIR624DP-T1-GE3 Datasheet (P4-P6)SIR624DP-T1-GE3 Datasheet (P7-P9)SIR624DP-T1-GE3 Datasheet (P10-P12)SIR624DP-T1-GE3 Datasheet (P13)
ECAD Model:
Más información:
SIR624DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
18.6 A
Rds On - Resistencia de la fuente de drenaje:
50 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
30 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
52 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
26 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
18 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
16 ns
Tiempo típico de retardo de encendido:
9 ns
Unidad de peso:
0.017870 oz
Tags
SIR62, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 200 V 60 mOhm 52 W ThunderFET Power Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 200V 18.6A 8-Pin PowerPAK SO EP T/R
***ark
N-CHANNEL 200-V (D-S) MOSFET ROHS COMPLIANT: YES
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descripción Valores Precio
SIR624DP-T1-GE3
DISTI # V72:2272_17600352		Vishay IntertechnologiesN-Channel 200 V (D-S) MOSFET4883
  • 6000:$0.4699
  • 3000:$0.4940
  • 1000:$0.5180
  • 500:$0.6566
  • 250:$0.6654
  • 100:$0.7393
  • 25:$0.8920
  • 10:$1.0902
  • 1:$1.3169
SIR624DP-T1-GE3
DISTI # V36:1790_17600352		Vishay IntertechnologiesN-Channel 200 V (D-S) MOSFET0
  • 6000000:$0.4731
  • 3000000:$0.4733
  • 600000:$0.4862
  • 60000:$0.5067
  • 6000:$0.5101
SIR624DP-T1-GE3
DISTI # SIR624DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 200V 18.6A SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5844In Stock
  • 1000:$0.5629
  • 500:$0.7130
  • 100:$0.8631
  • 10:$1.1070
  • 1:$1.2400
SIR624DP-T1-GE3
DISTI # SIR624DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 200V 18.6A SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5844In Stock
  • 1000:$0.5629
  • 500:$0.7130
  • 100:$0.8631
  • 10:$1.1070
  • 1:$1.2400
SIR624DP-T1-GE3
DISTI # SIR624DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 200V 18.6A SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.4664
  • 6000:$0.4846
  • 3000:$0.5101
SIR624DP-T1-GE3
DISTI # 33962656		Vishay IntertechnologiesN-Channel 200 V (D-S) MOSFET4883
  • 13:$1.3169
SIR624DP-T1-GE3
DISTI # SIR624DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 5.7A 8-Pin PowerPAK SO T/R (Alt: SIR624DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.6759
  • 18000:€0.7069
  • 12000:€0.7999
  • 6000:€0.9859
  • 3000:€1.3749
SIR624DP-T1-GE3
DISTI # SIR624DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 5.7A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR624DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.4439
  • 30000:$0.4569
  • 18000:$0.4699
  • 12000:$0.4899
  • 6000:$0.5049
SIR624DP-T1-GE3
DISTI # SIR624DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 5.7A 8-Pin PowerPAK SO T/R (Alt: SIR624DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    SIR624DP-T1-GE3
    DISTI # 20AC3890    		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET0
    • 10000:$0.4410
    • 6000:$0.4520
    • 4000:$0.4690
    • 2000:$0.5210
    • 1000:$0.5730
    • 1:$0.5970
    SIR624DP-T1-GE3
    DISTI # 78-SIR624DP-T1-GE3    		Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		17969
    • 1:$1.2100
    • 10:$0.9990
    • 100:$0.7660
    • 500:$0.6590
    • 1000:$0.5200
    • 3000:$0.4850
    • 6000:$0.4610
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    THGBMNG5D1LBAIL

    Mfr.#: THGBMNG5D1LBAIL

    OMO.#: OMO-THGBMNG5D1LBAIL

    		 eMMC 4GB 15nm eMMC (EEPROM)
    5.0SMDJ150CA

    Mfr.#: 5.0SMDJ150CA

    OMO.#: OMO-5-0SMDJ150CA

    		 TVS Diodes / ESD Suppressors 5kW 150V 5% Bi-Directional
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    Mfr.#: 5.0SMDJ150CA

    OMO.#: OMO-5-0SMDJ150CA-LITTELFUSE

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    FZT458TA

    Mfr.#: FZT458TA

    OMO.#: OMO-FZT458TA-DIODES

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    XLH730050.000000X

    Mfr.#: XLH730050.000000X

    OMO.#: OMO-XLH730050-000000X-INTEGRATED-DEVICE-TECH

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    Mfr.#: EVALM1CTE620N3TOBO1

    OMO.#: OMO-EVALM1CTE620N3TOBO1-1190

    		 EVAL-BOARD / DESGIN-KIT
    THGBMNG5D1LBAIL

    Mfr.#: THGBMNG5D1LBAIL

    OMO.#: OMO-THGBMNG5D1LBAIL-TOSHIBA-MEMORY-AMERICA

    		 4GB NAND 15NM EMBEDDED MULTIMEDI eMMC
    Disponibilidad
    Valores:
    17
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de SIR624DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,21 US$
    1,21 US$
    10
    1,00 US$
    9,99 US$
    100
    0,77 US$
    76,60 US$
    500
    0,66 US$
    329,50 US$
    1000
    0,52 US$
    520,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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