SIHU7N60E-E3

SIHU7N60E-E3
Mfr. #:
SIHU7N60E-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs IPAK (TO-251)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHU7N60E-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU7N60E-E3 DatasheetSIHU7N60E-E3 Datasheet (P4-P6)SIHU7N60E-E3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIHU7N60E-E3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
609 V
Id - Corriente de drenaje continua:
7 A
Rds On - Resistencia de la fuente de drenaje:
600 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
20 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
78 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
14 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
75
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
24 ns
Tiempo típico de retardo de encendido:
13 ns
Unidad de peso:
0.011640 oz
Tags
SIHU7, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 7A 3-Pin IPAK
*** Europe
MOSFET N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHU7N60E-E3
DISTI # SIHU7N60E-E3-ND
Vishay SiliconixMOSFET N-CH 600V 7A TO-251
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.9890
SIHU7N60E-E3
DISTI # SIHU7N60E-E3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin IPAK - Tape and Reel (Alt: SIHU7N60E-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.9689
  • 6000:$0.9399
  • 12000:$0.9019
  • 18000:$0.8769
  • 30000:$0.8529
SIHU7N60E-GE3
DISTI # 78-SIHU7N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
0
  • 1:$1.8400
  • 10:$1.5300
  • 100:$1.1800
  • 500:$1.0400
  • 1000:$0.9850
  • 3000:$0.9840
SIHU7N60E-E3
DISTI # 78-SIHU7N60E-E3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
0
  • 3000:$0.9000
  • 6000:$0.8660
  • 9000:$0.8330
SIHU7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
Americas -
    Imagen Parte # Descripción
    SIHU7N60E-GE3

    Mfr.#: SIHU7N60E-GE3

    OMO.#: OMO-SIHU7N60E-GE3

    MOSFET 600V Vds 30V Vgs IPAK (TO-251)
    SIHU7N60E-E3

    Mfr.#: SIHU7N60E-E3

    OMO.#: OMO-SIHU7N60E-E3

    MOSFET 600V Vds 30V Vgs IPAK (TO-251)
    SIHU7N60E-E3

    Mfr.#: SIHU7N60E-E3

    OMO.#: OMO-SIHU7N60E-E3-VISHAY

    RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
    SIHU7N60E

    Mfr.#: SIHU7N60E

    OMO.#: OMO-SIHU7N60E-1190

    Nuevo y original
    SIHU7N60E-GE3

    Mfr.#: SIHU7N60E-GE3

    OMO.#: OMO-SIHU7N60E-GE3-VISHAY

    MOSFET N-CH 600V 7A TO-251
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de SIHU7N60E-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    3000
    0,90 US$
    2 700,00 US$
    6000
    0,87 US$
    5 196,00 US$
    9000
    0,83 US$
    7 497,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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