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SIHU7N60E-GE3

SIHU7N60E-GE3
Mfr. #:
SIHU7N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs IPAK (TO-251)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHU7N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU7N60E-GE3 DatasheetSIHU7N60E-GE3 Datasheet (P4-P6)SIHU7N60E-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIHU7N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
609 V
Id - Corriente de drenaje continua:
7 A
Rds On - Resistencia de la fuente de drenaje:
600 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
20 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
78 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
14 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
75
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
24 ns
Tiempo típico de retardo de encendido:
13 ns
Unidad de peso:
0.011640 oz
Tags
SIHU7, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    R***m
    R***m
    LB

    item received thanks to the seller

    2019-03-18
    A***V
    A***V
    RU

    Everything works

    2019-04-06
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin IPAK
***ment14 APAC
MOSFET, N CH, 600V, 7A, TO-251-3
***i-Key
MOSFET N-CH 600V 7A TO-251
***ark
N-CHANNEL 600V
***nell
MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHU7N60E-GE3
DISTI # SIHU7N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO-251
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.8363
SIHU7N60E-GE3
DISTI # SIHU7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin IPAK (Alt: SIHU7N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.6979
  • 500:€0.7069
  • 100:€0.7189
  • 50:€0.7299
  • 25:€0.8259
  • 10:€1.0179
  • 1:€1.4189
SIHU7N60E-GE3
DISTI # SIHU7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin IPAK - Tape and Reel (Alt: SIHU7N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7559
  • 18000:$0.7769
  • 12000:$0.7989
  • 6000:$0.8329
  • 3000:$0.8579
SIHU7N60E-GE3
DISTI # 68W7074		Vishay IntertechnologiesMOSFET, N CH, 600V, 7A, TO-251-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 12000:$0.7320
  • 6000:$0.8260
  • 3000:$0.8680
  • 1:$0.8740
SIHU7N60E-GE3
DISTI # 68W7073		Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 7A, TO-251-3,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1000:$1.0900
  • 500:$1.2800
  • 250:$1.4600
  • 100:$1.6400
  • 50:$1.8200
  • 25:$1.9700
  • 1:$2.0600
SIHU7N60E-GE3
DISTI # 63W4120		Vishay IntertechnologiesPower MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes1488
  • 2500:$0.8070
  • 1000:$0.8960
  • 500:$0.9990
  • 100:$1.1000
  • 50:$1.2200
  • 25:$1.3200
  • 10:$1.4200
  • 1:$1.7100
SIHU7N60E-GE3
DISTI # 78-SIHU7N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		0
  • 3000:$0.7970
  • 6000:$0.7680
SIHU7N60E-E3
DISTI # 78-SIHU7N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		0
  • 3000:$0.9000
  • 6000:$0.8660
  • 9000:$0.8330
SIHU7N60E-GE3Vishay Intertechnologies 2100
    SIHU7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs IPAK (TO-251)
    RoHS: Compliant    		Americas -
      SIHU7N60E-GE3
      DISTI # 2283639      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, IPAK
      RoHS: Compliant      		1488
      • 100:$1.8200
      • 10:$2.3400
      • 1:$2.8200
      SIHU7N60E-GE3
      DISTI # 2283639      		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, IPAK1670
      • 500:£0.8830
      • 250:£0.9540
      • 100:£1.0200
      • 25:£1.3100
      • 5:£1.4300
      Imagen Parte # Descripción
      SIHU7N60E-GE3

      Mfr.#: SIHU7N60E-GE3

      OMO.#: OMO-SIHU7N60E-GE3

      		 MOSFET 600V Vds 30V Vgs IPAK (TO-251)
      SIHU7N60E-E3

      Mfr.#: SIHU7N60E-E3

      OMO.#: OMO-SIHU7N60E-E3

      		 MOSFET 600V Vds 30V Vgs IPAK (TO-251)
      SIHU7N60E-E3

      Mfr.#: SIHU7N60E-E3

      OMO.#: OMO-SIHU7N60E-E3-VISHAY

      		 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
      SIHU7N60E

      Mfr.#: SIHU7N60E

      OMO.#: OMO-SIHU7N60E-1190

      		 Nuevo y original
      SIHU7N60E-GE3

      Mfr.#: SIHU7N60E-GE3

      OMO.#: OMO-SIHU7N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 7A TO-251
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de SIHU7N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      3000
      0,80 US$
      2 391,00 US$
      6000
      0,77 US$
      4 608,00 US$
      12000
      0,74 US$
      8 856,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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