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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI4982DY-T1-E3 DISTI # 85W2155 | Vishay Intertechnologies | Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2W,No. of Pins:8Pins RoHS Compliant: Yes | 0 | |
| SI4982DY-T1-E3 DISTI # 781-SI4982DY-T1-E3 | Vishay Intertechnologies | MOSFET 100V 2.6A 2W RoHS: Compliant | 0 | |
| SI4982DY-T1 DISTI # 781-SI4982DY-TR | Vishay Intertechnologies | MOSFET 100V 2.6A 2W RoHS: Not compliant | 0 | |
| SI4982DY-T1-E3 | Vishay Siliconix | 2.6 A, 100 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 40 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI4982DY OMO.#: OMO-SI4982DY-1190 |
MOSFET 100V 2.6A 2W |
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Mfr.#: SI4982DY-T OMO.#: OMO-SI4982DY-T-1190 |
Nuevo y original |
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Mfr.#: SI4982DY-T1 OMO.#: OMO-SI4982DY-T1-1190 |
MOSFET 100V 2.6A 2W |
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Mfr.#: SI4982DY-T1-E3 OMO.#: OMO-SI4982DY-T1-E3-1190 |
Transistor Polarity:Dual N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.13ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power |