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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI4982DY-T1-E3 DISTI # 85W2155 | Vishay Intertechnologies | Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2W,No. of Pins:8Pins RoHS Compliant: Yes | 0 | |
| SI4982DY DISTI # 781-SI4982DY | Vishay Intertechnologies | MOSFET 100V 2.6A 2W RoHS: Not compliant | 0 | |
| SI4982DY-T1-E3 DISTI # 781-SI4982DY-T1-E3 | Vishay Intertechnologies | MOSFET 100V 2.6A 2W RoHS: Compliant | 0 | |
| SI4982DY-E3 DISTI # 781-SI4982DY-E3 | Vishay Intertechnologies | MOSFET 100V 2.6A 2W RoHS: Compliant | 0 | |
| SI4982DY-T1 DISTI # 781-SI4982DY-TR | Vishay Intertechnologies | MOSFET 100V 2.6A 2W RoHS: Not compliant | 0 | |
| SI4982DY-T1 | Vishay Siliconix | 2.6 A, 100 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 40 |
|
| SI4982DY-T1 | Vishay Siliconix | 2.6 A, 100 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 24 |
|
| SI4982DY-T1-E3 | Vishay Siliconix | 2.6 A, 100 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 40 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI4910DY-T1-GE3 OMO.#: OMO-SI4910DY-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 |
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Mfr.#: SI4904-GL OMO.#: OMO-SI4904-GL-1190 |
Nuevo y original |
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Mfr.#: SI4920DY-T1-E3 OMO.#: OMO-SI4920DY-T1-E3-VISHAY |
MOSFET 2N-CH 30V 8-SOIC |
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Mfr.#: SI4925DY-11 OMO.#: OMO-SI4925DY-11-1190 |
Nuevo y original |
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Mfr.#: SI4947 OMO.#: OMO-SI4947-1190 |
Nuevo y original |
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Mfr.#: SI4948BDY OMO.#: OMO-SI4948BDY-1190 |
Nuevo y original |
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Mfr.#: SI4963DY OMO.#: OMO-SI4963DY-1190 |
Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI4963DY-TI-E3 OMO.#: OMO-SI4963DY-TI-E3-1190 |
Nuevo y original |
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Mfr.#: SI4966DYT1 OMO.#: OMO-SI4966DYT1-1190 |
Nuevo y original |
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Mfr.#: SI4982DY-T OMO.#: OMO-SI4982DY-T-1190 |
Nuevo y original |