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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SEMIX453GB12E4P DISTI # 71042427 | SEMIKRON | SEMIX,Compact design- Trench IGBT Module,Thermal pressure contact,no baseplat RoHS: Not Compliant | 0 |
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| Imagen | Parte # | Descripción |
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Mfr.#: SEMIX452GAR12 OMO.#: OMO-SEMIX452GAR12-1190 |
Nuevo y original |
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Mfr.#: SEMIX452GB126HD OMO.#: OMO-SEMIX452GB126HD-1190 |
Nuevo y original |
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Mfr.#: SEMIX453GB12E4 OMO.#: OMO-SEMIX453GB12E4-1190 |
Nuevo y original |
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Mfr.#: SEMIX453GB12E4P OMO.#: OMO-SEMIX453GB12E4P-1190 |
Nuevo y original |
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Mfr.#: SEMIX453GB12E4S OMO.#: OMO-SEMIX453GB12E4S-1190 |
IGBT, MODULE, 1.2KV, 683A, SEMIX 3S, Transistor Polarity:Dual N Channel, DC Collector Current:683A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Vo |
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Mfr.#: SEMIX453GB12T4S OMO.#: OMO-SEMIX453GB12T4S-1190 |
Insulated Gate Bipolar Transistor, 685A I(C), 1200V V(BR)CES, N-Channel |
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Mfr.#: SEMIX453GB12VS OMO.#: OMO-SEMIX453GB12VS-1190 |
Nuevo y original |
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Mfr.#: SEMIX453GB176HDS OMO.#: OMO-SEMIX453GB176HDS-1190 |
IGBT MODULE, 1.7KV, 444A, SEMIX 3S, Transistor Polarity:N Channel, DC Collector Current:444A, Collector Emitter Saturation Voltage Vce(on):1.7kV, Power Dissipation Pd:-, Collector Emitter Voltage |
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Mfr.#: SEMIX453GD12VC OMO.#: OMO-SEMIX453GD12VC-1190 |
Nuevo y original |