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IPW50R299CP

IPW50R299CP
Mfr. #:
IPW50R299CP
Fabricante:
Rochester Electronics, LLC
Descripción:
IGBT Transistors MOSFET N-Ch 500V 12A TO247-3 CoolMOS CP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW50R299CP Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
categoria de producto
FET - Single
Serie
CoolMOS CP
embalaje
Tubo
Alias ​​de parte
IPW50R299CPFKSA1 IPW50R299CPXK SP000301163
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Nombre comercial
CoolMOS
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
104 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
14 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
12 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Resistencia a la fuente de desagüe de Rds
299 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
80 ns
Tiempo de retardo de encendido típico
35 ns
Modo de canal
Mejora
Tags
IPW50R29, IPW50R2, IPW50, IPW5, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-247; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Parte # Mfg. Descripción Valores Precio
IPW50R299CPFKSA1
DISTI # IPW50R299CPFKSA1-ND		Infineon Technologies AGMOSFET N-CH 550V 12A TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IPW50R299CPInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    RoHS: Compliant    		9838
    • 1000:$1.2600
    • 500:$1.3300
    • 100:$1.3800
    • 25:$1.4400
    • 1:$1.5600
    IPW50R299CPFKSA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    RoHS: Compliant    		140
    • 1000:$1.2600
    • 500:$1.3300
    • 100:$1.3800
    • 25:$1.4400
    • 1:$1.5600
    IPW50R299CP
    DISTI # 726-IPW50R299CP    		Infineon Technologies AGMOSFET N-Ch 500V 12A TO247-3 CoolMOS CP
    RoHS: Compliant    		210
    • 1:$2.7600
    • 10:$2.3500
    • 100:$2.0400
    IPW50R299CPFKSA1
    DISTI # N/A    		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      Imagen Parte # Descripción
      IPW50R299CPFKSA1

      Mfr.#: IPW50R299CPFKSA1

      OMO.#: OMO-IPW50R299CPFKSA1

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      OMO.#: OMO-IPW50R140CPFKSA1

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      IPW50R250CPFKSA1

      Mfr.#: IPW50R250CPFKSA1

      OMO.#: OMO-IPW50R250CPFKSA1-INFINEON-TECHNOLOGIES

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      Mfr.#: IPW50R250CP

      OMO.#: OMO-IPW50R250CP-124

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      Mfr.#: IPW50R190CEFKSA1

      OMO.#: OMO-IPW50R190CEFKSA1-INFINEON-TECHNOLOGIES

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      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de IPW50R299CP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,12 US$
      2,12 US$
      10
      2,01 US$
      20,09 US$
      100
      1,90 US$
      190,35 US$
      500
      1,80 US$
      898,90 US$
      1000
      1,69 US$
      1 692,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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