IPW50R190CEFKSA1

IPW50R190CEFKSA1
Mfr. #:
IPW50R190CEFKSA1
Fabricante:
Infineon Technologies
Descripción:
Darlington Transistors MOSFET N-Ch 550V 63A TO247-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW50R190CEFKSA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPW50R190
embalaje
Tubo
Alias ​​de parte
IPW50R190CE SP000850798
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Nombre comercial
CoolMOS
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
127 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
7.5 ns
Hora de levantarse
8.5 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
63 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
190 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
54 ns
Tiempo de retardo de encendido típico
9.5 ns
Qg-Gate-Charge
47.2 nC
Tags
IPW50R190, IPW50R19, IPW50R1, IPW50, IPW5, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-CH 550V 24.8A 3-Pin TO-247 Tube
***ure Electronics
500V, 0.19 ohms, 63A, TO-247 CoolMOS Power Transistor
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
Parte # Mfg. Descripción Valores Precio
IPW50R190CEFKSA1
DISTI # IPW50R190CEFKSA1-ND
Infineon Technologies AGMOSFET N-CH 500V 18.5A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IPW50R190CEFKSA1
    DISTI # 50Y2084
    Infineon Technologies AGMOSFET Transistor, N Channel, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V RoHS Compliant: Yes0
      IPW50R190CEFKSA1
      DISTI # 726-IPW50R190CEFKSA1
      Infineon Technologies AGMOSFET N-Ch 500V 63A TO247-3
      RoHS: Compliant
      1
      • 1:$2.1200
      • 10:$1.8000
      • 100:$1.4400
      • 500:$1.2600
      • 1000:$1.0500
      • 2500:$0.9720
      • 5000:$0.9360
      IPW50R190CE
      DISTI # 726-IPW50R190CE
      Infineon Technologies AGMOSFET N-Ch 500V 63A TO247-3
      RoHS: Compliant
      0
      • 1:$2.1200
      • 10:$1.8000
      • 100:$1.4400
      IPW50R190CEFKSA1Infineon Technologies AGPower Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
      RoHS: Compliant
      69744
      • 1000:$0.8700
      • 500:$0.9100
      • 100:$0.9500
      • 25:$0.9900
      • 1:$1.0700
      IPW50R190CEFKSA1
      DISTI # 2480873
      Infineon Technologies AGMOSFET, N-CH, 500V, 18.5A, TO-247-3
      RoHS: Compliant
      0
      • 1:$3.2400
      Imagen Parte # Descripción
      IPW50R190CEFKSA1

      Mfr.#: IPW50R190CEFKSA1

      OMO.#: OMO-IPW50R190CEFKSA1

      MOSFET N-Ch 500V 63A TO247-3
      IPW50R199CPFKSA1

      Mfr.#: IPW50R199CPFKSA1

      OMO.#: OMO-IPW50R199CPFKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 550V 17A TO-247
      IPW50R190CE

      Mfr.#: IPW50R190CE

      OMO.#: OMO-IPW50R190CE-1190

      Transistor MOSFET N-CH 550V 24.8A 3-Pin TO-247 Tube - Bulk (Alt: IPW50R190CE)
      IPW50R190CE,5R190C,

      Mfr.#: IPW50R190CE,5R190C,

      OMO.#: OMO-IPW50R190CE-5R190C--1190

      Nuevo y original
      IPW50R190CE,5R190E

      Mfr.#: IPW50R190CE,5R190E

      OMO.#: OMO-IPW50R190CE-5R190E-1190

      Nuevo y original
      IPW50R190CE,IPW65R080CFD

      Mfr.#: IPW50R190CE,IPW65R080CFD

      OMO.#: OMO-IPW50R190CE-IPW65R080CFD-1190

      Nuevo y original
      IPW50R190CEFKSA1 , 2SJ23

      Mfr.#: IPW50R190CEFKSA1 , 2SJ23

      OMO.#: OMO-IPW50R190CEFKSA1-2SJ23-1190

      Nuevo y original
      IPW50R199CP,5R199P

      Mfr.#: IPW50R199CP,5R199P

      OMO.#: OMO-IPW50R199CP-5R199P-1190

      Nuevo y original
      IPW50R199CP

      Mfr.#: IPW50R199CP

      OMO.#: OMO-IPW50R199CP-124

      Darlington Transistors MOSFET N-Ch 500V 17A TO247-3 CoolMOS CP
      IPW50R190CEFKSA1

      Mfr.#: IPW50R190CEFKSA1

      OMO.#: OMO-IPW50R190CEFKSA1-INFINEON-TECHNOLOGIES

      Darlington Transistors MOSFET N-Ch 550V 63A TO247-3
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de IPW50R190CEFKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,26 US$
      1,26 US$
      10
      1,19 US$
      11,94 US$
      100
      1,13 US$
      113,12 US$
      500
      1,07 US$
      534,15 US$
      1000
      1,01 US$
      1 005,50 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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