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RGTH80TK65GC11

RGTH80TK65GC11
Mfr. #:
RGTH80TK65GC11
Fabricante:
Rohm Semiconductor
Descripción:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RGTH80TK65GC11 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RGTH80TK65GC11 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3PFM
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
31 A
Pd - Disipación de energía:
66 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
Semiconductor ROHM
Corriente de fuga puerta-emisor:
200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Parte # Alias:
RGTH80TK65
Tags
RGTH8, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 31A 66000mW 3-Pin(3+Tab) TO-3PFM Tube
***Components
In a Tube of 30, ROHM RGTH80TK65GC11 IGBT
***nell
IGBT, 650V, 31A, 175DEG C, 66W
***ark
Igbt, 650V, 31A, 175Deg C, 66W; Dc Collector Current:31A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:66W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-3Pfm; No. Of Pins:3Pins; Rohs Compliant: Yes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Imagen Parte # Descripción
RGTH80TK65GC11

Mfr.#: RGTH80TK65GC11

OMO.#: OMO-RGTH80TK65GC11

 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGTH80TK65DGC11

Mfr.#: RGTH80TK65DGC11

OMO.#: OMO-RGTH80TK65DGC11

 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGTH80TS65GC11

Mfr.#: RGTH80TS65GC11

OMO.#: OMO-RGTH80TS65GC11

 IGBT Transistors 650V 40A Trench IGBT Field Stop TO-247N
RGTH80TS65DGC11

Mfr.#: RGTH80TS65DGC11

OMO.#: OMO-RGTH80TS65DGC11

 IGBT Transistors 650V 40A IGBT Stop Trench
RGTH80TS65DGC11

Mfr.#: RGTH80TS65DGC11

OMO.#: OMO-RGTH80TS65DGC11-ROHM-SEMI

 IGBT Transistors 650V 40A Field Stop Trench IGBT
RGTH80TS65GC11

Mfr.#: RGTH80TS65GC11

OMO.#: OMO-RGTH80TS65GC11-ROHM-SEMI

 650V 40A FIELD STOP TRENCH IGBT
RGTH80TS65

Mfr.#: RGTH80TS65

OMO.#: OMO-RGTH80TS65-1190

 Nuevo y original
RGTH80TS65D

Mfr.#: RGTH80TS65D

OMO.#: OMO-RGTH80TS65D-1190

 ROHRGTH80TS65D (Alt: RGTH80TS65D)
Disponibilidad
Valores:
450
En orden:
2433
Ingrese la cantidad:
El precio actual de RGTH80TK65GC11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,97 US$
4,97 US$
10
4,23 US$
42,30 US$
100
3,66 US$
366,00 US$
250
3,48 US$
870,00 US$
500
3,12 US$
1 560,00 US$
1000
2,63 US$
2 630,00 US$
2500
2,50 US$
6 250,00 US$
5000
2,40 US$
12 000,00 US$
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